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Influence of Silicon-Doping in n-AlGaN Layer on the Optical and Electrical Performance of Deep Ultraviolet Light-Emitting Diodes

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Abstract

The influence of two different methods of silicon doping in AlGaN layer, that is, modulation-doping (MD) and delta-doping (DD), on the optical and electrical performance of deep ultraviolet light-emitting diodes (DUV-LEDs) has been investigated. Both the photoluminescence and electroluminescence intensities in the Si-DD structure are stronger than those obtained by the Si-MD method, while the forward voltage and reverse leakage current are slightly smaller in the DD structure than that in the MD structure. Compared with the MD structure, the DD structure shows higher capacitance-voltage characteristics. This study suggests that the DD method can improve the optical and electrical performance of DUV-LEDs.

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ACKNOWLEDGMENTS

This work was supported by the National Natural Science Foundation of China for Excellent Young Scholars (no. 61622404), National Natural Science Foundation of China (no. 61177052), National Key R&D Program of China (no. 2016YFB0400802), the National Natural Sciences Foundation of China (Grant no. 61674147), Beijing Nova Program Z181100006218007, Youth Innovation Promotion Association CAS 2017157, Beijing Municipal Science and Technology Project under grant no. D161100002516002, the Science and Technology Planning Projects of Guangdong Province, China under grant no. 2015B010114007.

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Correspondence to Jianchang Yan or Miao He.

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Sipan Yang, Yan, J., He, M. et al. Influence of Silicon-Doping in n-AlGaN Layer on the Optical and Electrical Performance of Deep Ultraviolet Light-Emitting Diodes. Russ. J. Phys. Chem. 93, 2817–2823 (2019). https://doi.org/10.1134/S003602441913034X

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Keywords:

  • ultraviolet light-emitting diodes
  • Si-doping
  • n-AlGaN layer
  • current
  • bias voltage
  • capacitance