Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films
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The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р, Torr ≤ 760 and temperatures 300 ≤ Т, K ≤ 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: В + В4С, В4С + В2О3, С + В2О3 + В4С, С + В2О3, С + В2О3 + НВО2, С + НВО2, С + В4С, and a В4С phase.
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