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Optical Properties of Doped Nanowires in External Electric and Magnetic Fields

  • OPTICS OF LOW-DIMENSIONAL STRUCTURES, MESOSTRUCTURES, AND METAMATERIALS
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Abstract

Impurity-induced absorption of light in quantum wires in the presence of external collinear electric and magnetic fields directed perpendicular to the nanowire axis is studied theoretically. The dopants in the quantum wire are modeled by a zero-radius potential. Expressions governing the light absorption coefficient are derived, and specificities of impurity light absorption are studied for all possible directions of polarization of the light wave. In particular, some of optical transitions that are forbidden in the absence of fields become allowed in the presence of external fields. Frequency dependences of light-absorption coefficient, along with the influence of electric and magnetic fields on the magnitude of absorption induced by impurities, are investigated. The possibility of controlling optical characteristics of nanowires by means of an electric field is demonstrated.

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REFERENCES

  1. H. Sakaki, T. Noda, K. Hurakawa, et al., Appl. Phys. Lett. 51, 1934 (1987). https://doi.org/10.1063/1.98305

    Article  ADS  Google Scholar 

  2. E. P. Sinyavskii and N. S. Kostyukevich, Opt. Spectrosc. 114, 205 (2013). https://doi.org/10.1134/S0030400X13020276

    Article  ADS  Google Scholar 

  3. T. Unuma, T. Takahashi, T. Noda, et al., J. Appl. Phys. 78, 3448 (2001). https://doi.org/10.1063/1.1376154

    Article  Google Scholar 

  4. R. Agarwal and C. M. Lieber, Appl. Phys. A 85, 209 (2006). https://doi.org/10.1007/s00339-006-3720-z

    Article  ADS  Google Scholar 

  5. U. Jahn, J. Lähnemann, C. Pfüller, et al., Phys. Rev. B 85, 045323 (2012). https://doi.org/10.1103/PhysRevB.85.045323

    Article  ADS  Google Scholar 

  6. Xiao-Yan Yan, Cheng-Bao Yao, Jin Li, et al., Opt. Mater. 55, 73 (2016). https://doi.org/10.1016/j.optmat.2016.03.016

    Article  ADS  Google Scholar 

  7. Xianghui Zhang, Ye Zhang, Yipu Song, Zhe Wang, and Yu. Dapeng, Phys. E (Amsterdam, Neth.) 28, 1 (2005). https://doi.org/10.1016/j.physe.2004.12.022

  8. Sowmya Kolli, Chra Shekhar Pendyala, et al., J. Lumin. 141, 162 (2013). https://doi.org/10.1016/j.jlumin.2013.03.041

    Article  Google Scholar 

  9. C. W. J. Becnakker and H. van Houten, Solid States Physics Semiconductor Heterostructures and Nanosructures, Ed. by H. Ehrenreich (Academic, New York, 1991).

    Google Scholar 

  10. V. A. Geiler and V. A. Margulis, J. Exp. Theor. Phys. 86, 751 (1998).

    Article  ADS  Google Scholar 

  11. V. A. Geiler and V. A. Margulis, Semiconductors 33, 1040 (1999).

    Article  ADS  Google Scholar 

  12. Yu. N. Demkov and V. N. Ostrovskii, Zero-Range Potentials and Their Applications in Atomic Physics (Springer-Verlag US, 1988). https://doi.org/10.1007/978-1-4684-5451-2

  13. E. P. Sinyavskii and S. A. Karapetyan, Semiconductors 46, 1008 (2012).

    Article  ADS  Google Scholar 

  14. E. P. Sinyavski and R. A. Khamidullin, Semiconductors 36, 924 (2002).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Institute of Applied Physics, Academy of Sciences of Moldova, MD 2028, Kishinev, Moldova

    E. P. Sinyavskii

  2. Shevchenko Transnistria State University, MD 3300, Tiraspol, Moldova

    S. M. Sokovnich

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  1. E. P. Sinyavskii
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  2. S. M. Sokovnich
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Correspondence to S. M. Sokovnich.

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Sinyavskii, E.P., Sokovnich, S.M. Optical Properties of Doped Nanowires in External Electric and Magnetic Fields. Opt. Spectrosc. 128, 1885–1891 (2020). https://doi.org/10.1134/S0030400X20110259

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  • DOI: https://doi.org/10.1134/S0030400X20110259

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