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Optics and Spectroscopy

, Volume 127, Issue 1, pp 36–39 | Cite as

Surface Polaritons in Silicon-Doped Aluminum and Gallium Nitride Films

  • N. N. Novikova
  • V. A. Yakovlev
  • S. A. KliminEmail author
  • T. V. Malin
  • A. M. Gilinsky
  • K. S. Zhuravlev
SPECTROSCOPY OF CONDENSED STATES
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Abstract

The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.

Keywords:

aluminum and gallium nitrides reflection and ATR spectroscopy surface polaritons 

Notes

FUNDING

This work was supported by the Program of the Presidium of the Russian Academy of Sciences I.7 “Modern Problems of Photonics; Sensing of Inhomogeneous Media and Materials” (N.N. Novikova, V.A. Yakovlev, and S.A. Klimin) and the Russian Foundation for Basic Research (project no. 18-52-00008) (T.V. Malin, A.M. Gilinsky, and K.S. Zhuravlev).

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • N. N. Novikova
    • 1
  • V. A. Yakovlev
    • 1
  • S. A. Klimin
    • 1
    Email author
  • T. V. Malin
    • 2
  • A. M. Gilinsky
    • 2
  • K. S. Zhuravlev
    • 2
    • 3
  1. 1. Institute of Spectroscopy, Russian Academy of SciencesMoscowTroitskRussia
  2. 2.Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of SciencesNovosibirskRussia
  3. 3.Novosibirsk State UniversityNovosibirskRussia

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