Study of electronic dynamics of quantum dots using resonant photoluminescence technique
The process of resonant photoluminescence of semiconductor quantum dots, which may serve as a basis for efficiently studying the dynamics of their electronic subsystem, is described theoretically. Potentialities of the spectroscopy of this type are analyzed using, as an example, the intraband relaxation of charge carriers in a quantum dot caused by their interaction with plasmons of doped regions of the heterostructure. Analytical expressions are obtained for the photoluminescence intensity, and conditions are found under which its spectrum provides the most explicit information about the intraband relaxation rates.
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