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Unusual X-Shaped Defects in the Silicon Single Crystal Subjected to Four-Point Bending

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Dislocations in single-crystal silicon created by the four-point bending method are investigated using a laboratory X-ray source. Two- and three-dimensional diffraction images in the Laue geometry of unusual X‑shaped dislocation structures have been obtained for the first time. The spatial arrangement of such linear defects is analyzed and their geometric characteristics are quantitatively determined.

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Funding

The work was supported by the Ministry of Science and Higher Education (state assignment to the Federal Scientific Research Center Crystallography and Photonics, application of tomographic algorithms) and by the Russian Foundation for Basic Research (project no. 18-29-26036_mk, search for diffraction reflections, and project no. 19-02-00556_A, experimental data analysis).

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Authors and Affiliations

  1. Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, 119333, Moscow, Russia

    D. A. Zolotov, V. E. Asadchikov, A. V. Buzmakov & I. G. Dyachkova

  2. Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia

    E. V. Suvorov

Authors
  1. D. A. Zolotov
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  2. V. E. Asadchikov
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  3. A. V. Buzmakov
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  4. I. G. Dyachkova
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  5. E. V. Suvorov
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Correspondence to D. A. Zolotov.

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Translated by R. Bando

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Zolotov, D.A., Asadchikov, V.E., Buzmakov, A.V. et al. Unusual X-Shaped Defects in the Silicon Single Crystal Subjected to Four-Point Bending. Jetp Lett. 113, 149–154 (2021). https://doi.org/10.1134/S0021364021030115

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