Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping
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Metamorphic laser heterostructures In(Sb, As)/In0.81Ga0.19As/In0.75Al0.25As with InSb/InAs/InGaAs composite quantum wells based on submonolayer InSb insertions in a 10-nm InAs layer have been grown by molecular beam epitaxy on GaAs (001) substrates. Stimulated emission at a wavelength of λ ~ 2.86 μm at temperatures of 10–60 K at optical pumping has been demonstrated in such structures without an optical cavity. The threshold pump power density is about 5 kW/cm2 at a temperature of 10 K.
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This work was supported in part by the Russian Foundation for Basic Research (project no. 18-02-00950) with the use of the equipment of the Shared Usage Center Materials Science and Diagnostics in Leading Technologies supported by the Ministry of Education and Science of the Russian Federation (subsidy no. 14.621.21.0007 id RFME-FI62114X0007).