Advertisement

JETP Letters

, Volume 109, Issue 11, pp 700–703 | Cite as

Analysis of the Properties of Metal Sulfide Nanocrystals Synthesized by the Langmuir—Blodgett Technique

  • S. A. BatsanovEmail author
  • A. K. Gutakovsky
Condensed Matter
  • 1 Downloads

Abstract

Nanocrystals of metal sulfides (CdS, ZnS, CdZnS, CuS, and PbS) are formed upon the interaction of gaseous hydrogen sulfide with Langmuir—Blodgett films of metal behenates. To remove the organic matrix, the Langmuir—Blodgett films are annealed at temperatures of 1302—350°C. The morphology and structure of two-dimensional arrays of nanocrystals at both stages of synthesis are investigated by high-resolution transmission electron microscopy. These experimental data are used to qualitatively describe the formation of nanocrystals and the transformation of their structure and morphology in the context of the known classical and nonclassical mechanisms.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M. V. Koval’chu, K. V. V. Klechkovskaya, and L. A. Feigin, Priroda, No. 11, 11 (2003).Google Scholar
  2. 2.
    L. M. Blinov, Russ. Chem. Rev. 52, 713 (1983).ADSCrossRefGoogle Scholar
  3. 3.
    L. M. Blinov, Sov. Phys. Usp. 31, 623 (1988).ADSCrossRefGoogle Scholar
  4. 4.
    A. G. Milekhin, L. L. Sveshnikova, S. M. Repinsky, A. K. Gutakovsky, and M. F, Zahn, Thin Solid Films F 422, 200 (2002).ADSCrossRefGoogle Scholar
  5. 5.
    A. K. Gutakovsky, L. L. Sveshnikova, S. A. Batsanov, and N. A. Eryukov, Optoelectron., Instrum. Data Process. 50, 304 (2014).CrossRefGoogle Scholar
  6. 6.
    S. A. Batsanov and A. K. Gutakovsky, Nanotechnol. Russ. 12, 357 (2017).CrossRefGoogle Scholar
  7. 7.
    J. M. Dona and J. Herrero, Thin Solid Films 268, 5 (1995).ADSCrossRefGoogle Scholar
  8. 8.
    J. Torres and G. Gordillo, Thin Solid Films 207, 231 (1992).ADSCrossRefGoogle Scholar
  9. 9.
    R. Sarkar, A. K. Shaw, S. S. Narayanan, C. Rothe, S. Hintschich, A. Monkman, and S. K. Pal, Opt. Mater. 29, 1310 (2007).ADSCrossRefGoogle Scholar
  10. 10.
    S. J., Rosenthal, J. C. Chang, O. Kovtun, J. R. Mc-Bride, and I. D. Tomlinson, Chem. Biol. 18, 10 (2011).CrossRefGoogle Scholar
  11. 11.
    Zh. Jialong, D. Kai, and Ch. Yimin, J. Lumin. 67, 332 (1996).Google Scholar
  12. 12.
    A. I. Ekimov and A. A. Onushchenko, Sov. Phys. Semicond. 16, 775 (1992).Google Scholar
  13. 13.
    A. G. Milekhin, L. L. Sveshnikova, T. A. Duda, N. A. Yeryukov, E. E. Rodyakina, A. K. Gutakovskii, S. A. Batsanov, A. V. Latyshev, and D. R. T, Zahn, Phys. E (Amsterdam, Neth.) 75, 210 (2016).CrossRefGoogle Scholar
  14. 14.
    W. K. Burton, N, Cabrera, and F. C. Franc, Phil. Trans. R. Soc., Ser. A 243, 299 (1951).ADSCrossRefGoogle Scholar
  15. 15.
    A. Nabo, K. I. Iwantono, A. Ray, I. Larkin, and T. J. Richardson, Phys. D: Appl. Phys. 35, 1512 (2002).ADSCrossRefGoogle Scholar
  16. 16.
    A. G. Milekhin, N. A. Yeryukov, L. L. Sveshnikova, T. A. Duda, D. Yu. Protasov, A. K. Gutakovskii, S. A. Batsanov, N. V. Surovtsev, S. V. Adichtchev, C. Himcinschi, V. Dzhagan, F. Haidu, and D. R. T. Zahn, J. Vac. Sci. Technol. B 31, 04D109 (2013).CrossRefGoogle Scholar
  17. 17.
    M. Volmer, Kinetic Der Phasenbildung (Steinkopf, Dresden, Leipzig, 1926).Google Scholar
  18. 18.
    O. V. Almjasheva and V. V. Gusarov, Nanosyst.: Phys., Chem., Math. 5, 405 (2014).Google Scholar
  19. 19.
    H, Colfen, L. Qi, Y, Mastai, and L. Borger, Cryst. Growth Des. 2, 191 (2002).CrossRefGoogle Scholar
  20. 20.
    V. K. Ivanov, P. P. Fedorov, A. E. Baranchikov, and V. V. Osiko, Russ. Chem. Rev. 83, 1204 (2014).ADSCrossRefGoogle Scholar
  21. 21.
    S. M. Repinskii, L. L. Sveshnikova, and Yu. I. Khapov, Russ. J. Phys. Chem. A 72, 724 (1998).Google Scholar
  22. 22.
    X. Fan, F. G. Luis, M. X., R. H. Chelsea, F. D. Matthew, and G. C. Sylvain, Materials 8, 1858 (2015).CrossRefGoogle Scholar
  23. 23.
    E. A. Bagaev, K. S. Zhuravlev, L. L. Sveshnikova, and D. V. Shcheglov, Semiconductors 42, 702 (2008).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Inc. 2019

Authors and Affiliations

  1. 1.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia

Personalised recommendations