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On the Accuracy of Conductance Quantization in Spin-Hall Insulators

  • S. K. Konyzheva
  • E. S. Tikhonov
  • V. S. KhrapaiEmail author
Article
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Abstract

In contrast to the case of ordinary quantum Hall effect, the resistance of ballistic helical edge channels in typical quantum spin-Hall experiments is non-vanishing, additive and poorly quantized. Here we present a simple argument connecting this qualitative difference with a spin relaxation in the current/voltage leads in an experimentally relevant multi-terminal bar geometry. Both the finite lead resistance and the spin relaxation contribute to a non-vanishing four-terminal edge resistance, explaining poor quantization quality. We show that corrections to the four-terminal and two-terminal resistances in the limit of strong spin relaxation are opposite in sign, making a measurement of the spin relaxation resistance feasible, and estimate the magnitude of the effect in HgTe-based quantum wells.

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • S. K. Konyzheva
    • 1
    • 2
  • E. S. Tikhonov
    • 1
    • 2
  • V. S. Khrapai
    • 1
    • 2
    Email author
  1. 1.Institute of Solid State PhysicsRussian Academy of SciencesChernogolovkaRussia
  2. 2.Moscow Institute of Physics and TechnologyDolgoprudnyRussia

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