Abstract
The temperature dependence of the switching frequency of a microwave-induced spontaneous electric field forming a domain structure and the conductance of a doping layer that provides electrons to the two-dimensional electron system have been measured on samples fabricated from the same GaAs/AlGaAs heterostructure. Both quantities have been found to obey the thermally activated dependence (Arrhenius law) with close activation energies. This result indicates a relation between the quantities and confirms a hypothesis that the observed dynamics of the domain structure originates from the dynamical screening of the spontaneous electric field of domains by charges in the doping layer.
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Original Russian Text © S.I. Dorozhkin, V. Umansky, K. von Klitzing, J.H. Smet, 2018, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2018, Vol. 107, No. 1, pp. 68–72.
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Dorozhkin, S.I., Umansky, V., von Klitzing, K. et al. Dynamics of Spontaneous Electric Field Domains in a Two-Dimensional Electron System Irradiated by Microwaves and the Conductance of a Donor Layer. Jetp Lett. 107, 61–65 (2018). https://doi.org/10.1134/S0021364018010046
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DOI: https://doi.org/10.1134/S0021364018010046