JETP Letters

, Volume 100, Issue 1, pp 32–38 | Cite as

Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at liquid helium temperatures

  • A. A. Zhukov
  • Ch. Volk
  • A. Winden
  • H. Hardtdegen
  • Th. Schäpers
Condensed Matter

Abstract

A set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at liquid helium temperatures in the presence of a charged atomic-force microscope tip has been presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling barrier and undivided wire is also addressed. Special attention is devoted to recently observed quasi-periodic standing waves.

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Copyright information

© Pleiades Publishing, Inc. 2014

Authors and Affiliations

  • A. A. Zhukov
    • 1
  • Ch. Volk
    • 2
    • 3
  • A. Winden
    • 2
    • 3
  • H. Hardtdegen
    • 2
    • 3
  • Th. Schäpers
    • 2
    • 3
    • 4
  1. 1.Institute of Solid State PhysicsRussian Academy of SciencesChernogolovka, Moscow regionRussia
  2. 2.Peter Grünberg Institut (PGI-9)Forschungszentrum JülichJülichGermany
  3. 3.JARA-Fundamentals of Future Information TechnologyForschungszentrum JülichJülichGermany
  4. 4.Physikalisches InstitutRWTH Aachen UniversityAachenGermany

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