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JETP Letters

, Volume 98, Issue 10, pp 603–608 | Cite as

Engineering near-surface electron states in three-dimensional topological insulators

  • V. N. Men’shov
  • V. V. Tugushev
  • E. V. Chulkov
Condensed Matter

Abstract

Using the continual model of a semi-infinite three dimensional (3D) topological insulator (TI) we study the effect of the surface potential (SP) on the formation of helical topological states near the surface. The results reveal that spatial profile and spectrum of these states strongly depend on the SP type and strength. We pay special attention to the 3D TI substrate/non-magnetic insulating overlayer system to illustrate the principles of the topological near-surface states engineering.

Keywords

Surface Potential JETP Letter Spin Orbit Coupling Topological Insulator Dirac Point 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010).ADSCrossRefGoogle Scholar
  2. 2.
    J. E. Moore, Nature Phys. 5, 378 (2009).ADSCrossRefGoogle Scholar
  3. 3.
    T. Okuda and A. Kimura, J. Phys. Soc. Jpn. 82, 021002 (2013).ADSCrossRefGoogle Scholar
  4. 4.
    I. Garate and M. Franz, Phys. Rev. Lett. 104, 146802 (2010).ADSCrossRefGoogle Scholar
  5. 5.
    R. Yu, W. Zhang, H.-J. Zhang, S.-C. Zhang, X. Dai, and Z. Fang, Science 329, 61 (2010).ADSCrossRefGoogle Scholar
  6. 6.
    T. Fujita, M. B. A. Jalil, and S. G. Tan, Appl. Phys. Express 4, 094201 (2011).ADSCrossRefGoogle Scholar
  7. 7.
    L. A. Wray, S. Xu, Y. Xia, D. Hsieh, A. V. Fedorov, Y. S. Hor, R. J. Cava, A. Bansil, H. Lin, and M. Z. Hasan, Nature Phys. 7, 32 (2011).ADSCrossRefGoogle Scholar
  8. 8.
    M. R. Scholz, J. Sanchez-Barriga, D. Marchenko, A. Varykhalov, A. Volykhov, L. V. Yashina, and O. Rader, Phys. Rev. Lett. 108, 256810 (2012).ADSCrossRefGoogle Scholar
  9. 9.
    T. Valla, Z.-H. Pan, D. Gardner, Y. S. Lee, and S. Chu, Phys. Rev. Lett. 108, 117601 (2012).ADSCrossRefGoogle Scholar
  10. 10.
    D. Kong, J. J. Cha, K. Lai, H. Peng, J. G. Analytis, S. Meister, Y. Chen, H.-J. Zhang, I. R. Fisher, Z.-X. Shen, and Y. Cui, ACS Nano 5, 4698 (2011).CrossRefGoogle Scholar
  11. 11.
    S. V. Eremeev, G. Landolt, T. V. Menshchikova, B. Slomski, Y. M. Koroteev, Z. S. Aliev, M. B. Babanly, J. Henk, A. Ernst, L. Patthey, A. Eich, A. A. Khajetoorians, J. Hagemeister, O. Pietzsch, J. Wiebe, R. Wiesen- danger, P. M. Echenique, S. S. Tsirkin, I. R. Amiraslanov, J. H. Dil, and E. V. Chulkov, Nature Commun. 3, 635 (2012).ADSCrossRefGoogle Scholar
  12. 12.
    L. Miao, Z. F. Wang, W. Ming, M.-Y. Yao, M. Wang, F. Yang, Y. R. Song, F. Zhu, A. V. Fedorov, Z. Sun, C.L. Gao, C. Liu, Q.-K. Xue, C.-X. Liu, F. Liu, D. Qian, and J.-F. Jia, Proc. Nat. Acad. Sci. 110, 2758 (2013).ADSCrossRefGoogle Scholar
  13. 13.
    G. S. Jenkins, A. B. Sushkov, D. C. Schmadel, A. B. Sushkov, H. D. Drew, M. Bichler, G. Koblmueller, M. Brahlek, N. Bansal, and S. Oh, arXiv:1208.3881.Google Scholar
  14. 14.
    M. H. Berntsen, O. Göttberg, and O. Tjernberg, Phys. Rev. B 87, 155126 (2013).CrossRefGoogle Scholar
  15. 15.
    J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, and L. Lu, Phys. Rev. Lett 105, 176602 (2010).ADSCrossRefGoogle Scholar
  16. 16.
    J. G. Checkelsky, Y. S. Hor, R. J. Cava, and N. P. Ong, Phys. Rev. Lett. 106, 196801 (2011).ADSCrossRefGoogle Scholar
  17. 17.
    M. Bianchi, R. C. Hatch, J. Mi, B. B. Iversen, and P. Hofmann, Phys. Rev. Lett. 107, 086802 (2011).ADSCrossRefGoogle Scholar
  18. 18.
    M. S. Bahramy, P. D. C. King, A. de la Torre, J. Chang, M. Shi, L. Patthey, G. Balakrishnan, Ph. Hofmann, R. Arita, N. Nagaosa, and F. Baumberger, Nature Commun. 3, 1159 (2012).ADSCrossRefGoogle Scholar
  19. 19.
    C. Pauly, G. Bihlmayer, M. Liebmann, M. Grob, A. Georgi, D. Subramaniam, M. R. Scholz, J. Sánchez-Barriga, A. Varykhalov, S. Blügel, O. Rader, and M. Morgenstern, Phys. Rev. B 86, 235106 (2012).ADSCrossRefGoogle Scholar
  20. 20.
    S. V. Eremeev, M. G. Vergniory, T. V. Menshchikova, A. A. Shaposhnikov, and E. V. Chulkov, New J. Phys. 14, 113030 (2012).ADSCrossRefGoogle Scholar
  21. 21.
    S. V. Eremeev, G. Bihlmayer, M. Vergniory, Yu. M. Koroteev, T. V. Menshchikova, J. Henk, A. Ernst, and E. V. Chulkov, Phys. Rev. B 83, 205129 (2011).ADSCrossRefGoogle Scholar
  22. 22.
    Q. Zhang, Z. Zhang, Z. Zhu, U. Schwingenschlogl, and Y. Cui, ASC Nano 6, 2345 (2012).CrossRefGoogle Scholar
  23. 23.
    G. Wu, H. Chen, Y. Sun, X. Li, P. Cui, C. Franchini, J. Wang, X.-Q. Chen, and Z. Zhang, Sci. Rep. 3, 1233 (2013).ADSGoogle Scholar
  24. 24.
    L. Zhao, J. Liu, P. Tang, and W. Duan, Appl. Phys. Lett. 100, 131602 (2012).ADSCrossRefGoogle Scholar
  25. 25.
    C. Chena, S. Hea, H. Weng, W. Zhang, L. Zhao, H. Liu, X. Jia, D. Mou, S. Liu, J. He, Y. Peng, Y. Feng, Z. Xie, G. Liu, X. Dong, J. Zhang, X. Wang, Q. Peng, Z. Wang, S. Zhang, F. Yang, C. Chen, Z. Xu, X. Dai, Z. Fang, and X. J. Zhou, Proc. Nat. Acad. Sci. 109, 3694 (2012).ADSCrossRefGoogle Scholar
  26. 26.
    S. V. Eremeev, Yu. M. Koroteev, and E. V. Chulkov, JETP Lett. 91, 387 (2010).ADSCrossRefGoogle Scholar
  27. 27.
    G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Nauka, Moscow, 1972; Wiley, New York and Keter Publ. House, Jerusalem, 1974).Google Scholar
  28. 28.
    H. Zhang, C. Liu, X. Qi, X. Dai, Z. Fang, and S. Zhang, Nature Phys. 5, 438 (2009).ADSCrossRefGoogle Scholar
  29. 29.
    C. X. Liu, X. L. Qi, H. J. Zhang, X. Dai, Z. Fang, and S.-C. Zhang, Phys. Rev. B 82, 045122 (2010).ADSCrossRefGoogle Scholar
  30. 30.
    W.-Y. Shan, H.-Z. Lu, and S.-Q. Shen, New J. Phys. 12, 043048 (2010).ADSCrossRefGoogle Scholar
  31. 31.
    A. Medhi and V. B. Shenoy, J. Phys.: Condens. Matter 24, 355001 (2012).Google Scholar
  32. 32.
    V. A. Volkov and T. N. Pinsker, Sov. Phys. Solid State 23, 1022 (1981).Google Scholar

Copyright information

© Pleiades Publishing, Inc. 2013

Authors and Affiliations

  • V. N. Men’shov
    • 1
    • 2
  • V. V. Tugushev
    • 1
    • 2
    • 3
  • E. V. Chulkov
    • 2
    • 4
  1. 1.National Research Centre Kurchatov InstituteMoscowRussia
  2. 2.Tomsk State UniversityTomskRussia
  3. 3.Prokhorov General Physics InstituteRussian Academy of SciencesMoscowRussia
  4. 4.Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPCCentro Mixto CSIC-UPV/EHUSan Sebastian, Basque CountrySpain

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