Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well
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We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numerical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilities limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.
KeywordsGaAs JETP Letter Quantum Well Surface Acoustic Wave Acoustic Power
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