JETP Letters

, 94:333 | Cite as

Normal state resistivity of Ba1−xKxFe2As2: evidence for multiband strong-coupling behavior

  • A. A. Golubov
  • O. V. Dolgov
  • A. V. Boris
  • A. Charnukha
  • D. L. Sun
  • C. T. Lin
  • A. F. Shevchun
  • A. V. Korobenko
  • M. R. Trunin
  • V. N. Zverev
Condensed Matter

Abstract

The normal state resistivity in multiband superconductors has been analyzed in the framework of Eliashberg theory. The results are compared with measurements of the temperature dependence of normal state resistivity of high-purity Ba0.68K0.32Fe2As2 single crystals with the highest reported transition temperature Tc = 38.5 K. The experimental data demonstrate strong deviations from the Bloch-Grüneisen behavior, namely the tendency to saturation of the resistivity at high temperatures. The observed behavior of the resistivity is explained within the two band scenario when the first band is strongly coupled and relatively clean, while the second band is weakly coupled and is characterized by much stronger impurity scattering.

References

  1. 1.
    H. J. Mooij, Phys. Status Solidi A 17, 521 (1973).ADSCrossRefGoogle Scholar
  2. 2.
    Z. Fisk and G. W. Webb, Phys. Rev. Lett. 36, 1084 (1976).ADSCrossRefGoogle Scholar
  3. 3.
    M. Gurvich, Phys. Rev. B 24, 7404 (1981).ADSCrossRefGoogle Scholar
  4. 4.
    V. F. Gantmakher, Electrons and Disorder in Solids (Oxford Univ. Press, Oxford, 2005).CrossRefMATHGoogle Scholar
  5. 5.
    M. Milewits, S. J. Williamson, and H. Taub, Phys. Rev. B 13, 5199 (1976).ADSCrossRefGoogle Scholar
  6. 6.
    Yu. A. Nefyodov, A. M. Shuvaev, and M. R. Trunin, Eur. Phys. Lett. 72, 638 (2005).ADSCrossRefGoogle Scholar
  7. 7.
    Y. Kamihara, T. Watanabe, M. Hirano, and H. Hosono, J. Am. Chem. Soc. 130, 3296 (2008).CrossRefGoogle Scholar
  8. 8.
    I. I. Mazin, D. J. Singh, M. D. Johannes, and M. H. Du, Phys. Rev. Lett. 101, 057003 (2008).ADSCrossRefGoogle Scholar
  9. 9.
    K. Kuroki, S. Onari, R. Arita, et al., Phys. Rev. Lett. 101, 087004 (2008).ADSCrossRefGoogle Scholar
  10. 10.
    I. I. Mazin, Nature 464, 183 (2010).ADSCrossRefGoogle Scholar
  11. 11.
    D. C. Johnston, arXiv:1005.4392.Google Scholar
  12. 12.
    F. Rullier-Albenque, D. Colson, A. Forget, and H. Alloul, Phys. Rev. Lett. 103, 057001 (2009).ADSCrossRefGoogle Scholar
  13. 13.
    L. Fang, H. Luo, P. Cheng, et al., Phys. Rev. B 80, 140508(R) (2009).ADSGoogle Scholar
  14. 14.
    H. Q. Luo, P. Cheng, Z. S. Wang, et al., Physica C 469, 477 (2009).ADSCrossRefGoogle Scholar
  15. 15.
    V. N. Zverev, A. V. Korobenko, G. L. Sun, et al., JETP Lett. 90, 130 (2009).ADSCrossRefGoogle Scholar
  16. 16.
    O. Heyer, T. Lorenz, V. B. Zabolotnyy, et al., arXiv:1010.2876.Google Scholar
  17. 17.
    F. Rullier-Albenque, D. Colson, A. Forget, et al., Phys. Rev. B 81, 224503 (2010).ADSCrossRefGoogle Scholar
  18. 18.
    K. Kudo, Y. Nishikubo, and M. Nohara, arXiv: 1010.3950.Google Scholar
  19. 19.
    P. Popovich, A. V. Boris, O. V. Dolgov, et al., Phys. Rev. Lett. 105, 027003 (2010).ADSCrossRefGoogle Scholar
  20. 20.
    G. Grimvall, The Electron-Phonon Interaction in Metals (North-Holland, Amsterdam, 1981).Google Scholar
  21. 21.
    P. B. Allen, Phys. Rev. B 3, 305 (1971).ADSCrossRefGoogle Scholar
  22. 22.
    M. R. Trunin, Sov. Phys. Usp. 168, 931 (2005).Google Scholar
  23. 23.
    A. Charnukha, O. V. Dolgov, A. A. Golubov, et al., arXiv:1103.0938.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2011

Authors and Affiliations

  • A. A. Golubov
    • 1
  • O. V. Dolgov
    • 2
  • A. V. Boris
    • 2
  • A. Charnukha
    • 2
  • D. L. Sun
    • 2
  • C. T. Lin
    • 2
  • A. F. Shevchun
    • 3
  • A. V. Korobenko
    • 3
    • 4
  • M. R. Trunin
    • 3
    • 4
  • V. N. Zverev
    • 3
    • 4
  1. 1.Faculty of Science and Technology and MESA + Institute for NanotechnologyUniversity of TwenteEnschedeThe Netherlands
  2. 2.Max-Planck-Institut fur FestkorperforschungStuttgartGermany
  3. 3.Institute of Solid State PhysicsChernogolovka, Moscow regionRussia
  4. 4.Moscow Institute of Physics and TechnologyDolgoprudnyi, Moscow regionRussia

Personalised recommendations