Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
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We have investigated the conductance of an InAs nanowire in the presence of an electrical potential created by an AFM scanning gate at liquid helium temperature. The influence of the direction of a local electrical field on the tunneling rate through a weak junction in the InAs wire is clearly observed. To explain this behavior, the redistribution of the electrons among conductive channels in the wire must be taken into account. We have confirmed that the pattern of Coulomb blockade diamonds gives the same result for the ratio of quantum dot sizes as that revealed by scanning gate imaging.
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- 20.A. A. Zhukov, Ch. Volk, and Th. Schäpers, Preprint “Application of the Rearrangeable Local Coulomb Potential Profile for Investigation of Conductivity of InAs Wires.”Google Scholar