JETP Letters

, Volume 91, Issue 1, pp 35–37 | Cite as

Photoconductivity of the narrow-gap Pb1 − x Sn x Te(In) semiconductors in the terahertz spectral range

  • A. V. Galeeva
  • L. I. Ryabova
  • A. V. Nikorich
  • S. D. Ganichev
  • S. N. Danilov
  • V. V. Bel’kov
  • D. R. Khokhlov
Condensed Matter

Abstract

The spectral dependence of photoconductivity in the doped narrow-gap semiconductor Pb0.75Sn0.25Te(In) under the action of terahertz laser radiation pulses has been studied at temperatures 4.2–30 K. It is shown that the photoconductivity spectrum of the semiconductor spreads at least up to the wavelength of 500 μm. This value is more than twice higher than the red cutoff wavelength of 220 μm in uniaxially stressed Ge(Ga) which is known as the most long-wavelength photodetector among sensitive photon detectors of radiation. Mechanisms responsible for photosensitivity of PbSnTe(In) in the terahertz spectral range are discussed.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    B. A. Volkov, L. I. Ryabova, and D. R. Khokhlov, Usp. Fiz. Nauk 172, 875 (2002) [Phys. Usp. 45, 819 (2002)].CrossRefGoogle Scholar
  2. 2.
    B. A. Volkov and O. M. Ruchaiskii, Pis’ma Zh. Eksp. Teor. Fiz. 62, 205 (1995) [JETP Lett. 62, 217 (1995)].Google Scholar
  3. 3.
    B. A. Akimov, A. V. Nikorich, D. R. Khokhlov, and S. N. Chesnokov, Fiz. Tekh. Poluprovodn. 23, 668 (1989) [Sov. Phys. Semicond. 23, 418 (1989)].Google Scholar
  4. 4.
    B. A. Akimov and D. R. Khokhlov, Semicond. Sci. Technol. 8, S349 (1993).CrossRefADSGoogle Scholar
  5. 5.
    N. A. Akimov, V. G. Erkov, V. V. Kubarev, et al., Fiz. Tekh. Poluprovodn. 40, 169 (2006) [Semiconductors 40, 164 (2006)].Google Scholar
  6. 6.
    D. R. Khokhlov, I. I. Ivanchik, S. N. Raines, et al., Appl. Phys. Lett. 76, 2835 (2000).CrossRefADSGoogle Scholar
  7. 7.
    K. G. Kristovskii, A. E. Kozhanov, D. E. Dolzhenko, et al., Fiz. Tverd. Tela 46, 123 (2004) [Phys. Solid State 46, 122 (2004)]; D. Khokhlov, L. Ryabova, A. Nicorici, et al., Appl. Phys. Lett. 93, 264103 (2008).Google Scholar
  8. 8.
    S. D. Ganichev and W. Prettl, Intense Terahertz Excitation of Semiconductors (Oxford Univ., Oxford, 2006).Google Scholar
  9. 9.
    A. G. Kazanskii, P. L. Richards, and E. E. Haller, Appl. Phys. Lett. 31, 496 (1977).CrossRefADSGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2010

Authors and Affiliations

  • A. V. Galeeva
    • 1
  • L. I. Ryabova
    • 1
  • A. V. Nikorich
    • 2
  • S. D. Ganichev
    • 3
  • S. N. Danilov
    • 3
  • V. V. Bel’kov
    • 3
    • 4
  • D. R. Khokhlov
    • 1
  1. 1.Moscow State UniversityMoscowRussia
  2. 2.Institute of Applied PhysicsAcademy of Sciences of MoldovaKishinevMoldova
  3. 3.Faculty of PhysicsUniversity of RegensburgRegensburgGermany
  4. 4.Ioffe Physicotechnical InstituteSt. PetersburgRussia

Personalised recommendations