Advertisement

JETP Letters

, Volume 87, Issue 8, pp 423–427 | Cite as

New mechanism of the formation of the nanorelief on a surface irradiated by a femtosecond laser pulse

  • V. V. Zhakhovskii
  • N. A. Inogamov
  • K. Nishihara
Condensed Matter

Abstract

The kinetics of fast processes induced by an ultrashort laser pulse is considered. The reliefs remaining after the action of a series of ultrashort laser pulses {S. A. Akhmanov, V. I. Emelyanov, N. I. Koroteev, et al., Usp. Fiz. Nauk 147, 675 (1985) [Sov. Phys. Usp. 28, 1084 (1985)]; F. Costache, S. Kouteva-Arguirova, and J. Reif, Appl. Phys. A 79, 1429 (2004)} have been studied. A new mechanism of perturbing the surface of the initially ideal crystal face is described. First, the formation of a relief is induced by a single pulse. Second, the relief scale along the target surface is about the heating depth d T ∼ 10–100 nm rather than the pump-pulse wavelength λpump ∼ 1 μm. Third, the formation of the relief is not attributed to the modulation of the electromagnetic field near the surface due to the interference of the incident light wave with the electromagnetic surface waves on the initial perturbations of the boundary. These three conditions are satisfied for a known instability induced by the interference of the incident and surface waves (see the works cited above [1]). In our case, the nanorelief is formed due to the deformation of the spalled layer by cavitation bubbles owing to the inhomogeneity of the drag force in the target plane. Cavitation is caused by the tension of the substance in the process of the expansion of a heated target. It is similar to the known phenomenon of the cavitation “spallation” in a liquid despite the large difference between the space-time scales of the usual spallation facility and the femtosecond heating. Owing to this difference, usual cavitation does not leave any morphological trace on the outer free surface of the spalled layer.

PACS numbers

52.38.Mf 52.65.Yy 81.16.-c 

References

  1. 1.
    S. A. Akhmanov, V. I. Emelyanov, N. I. Koroteev, et al., Usp. Fiz. Nauk 147, 675 (1985) [Sov. Phys. Usp. 28, 1084 (1985)]; F. Costache, S. Kouteva-Arguirova, and J. Reif, Appl. Phys. A 79, 1429 (2004).Google Scholar
  2. 2.
    Y. Mishin, D. Farkas, M. J. Mehl, and D. A. Papaconstantopoulos, Phys. Rev. B 59, 3393 (1999).CrossRefADSGoogle Scholar
  3. 3.
    V. V. Zhakovskii et al., JETP Lett. 71, 167 (2000).CrossRefADSGoogle Scholar
  4. 4.
    W. H. Duff and L. V. Zhigilei, J. Phys. 59, 413 (2007).Google Scholar
  5. 5.
    S. I. Anisimov et al., Zh. Eksp. Teor. Fiz. 130, 212 (2006) [JETP 103, 183 (2006)].Google Scholar
  6. 6.
    V. Zhakhovskii et al., in IEEE Proc. of 5th Intern. Symp. on Cluster Computing and Grid CCGrid 2005 (2005), Vol. 2, p. 848; arXiv:DC/0405086v1 (May 24, 2004).CrossRefGoogle Scholar
  7. 7.
    A. N. Volkov and L. V. Zhigilei, J. Phys. 59, 640 (2007).Google Scholar
  8. 8.
    A. V. Bushman, G. I. Kanel’, A. L. Ni, and V. E. Fortov, Intense Dynamic Loading of Condensed Matter (Taylor and Francis, London, 1993).Google Scholar
  9. 9.
    S. I. Anisimov, N. A. Inogamov, et al., Appl. Phys. A (2007) (in press).Google Scholar
  10. 10.
    N. A. Inogamov, V. V. Zhakhovskii, S. I. Ashitkov, et al., Zh. Eksp. Teor. Fiz. 133 (2008) (in print).Google Scholar
  11. 11.
    A. Y. Vorobyev and C. Guo, Appl. Phys. A 86, 235 (2007); Appl. Phys. Lett. 92, 041914 (2008).CrossRefADSGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2008

Authors and Affiliations

  • V. V. Zhakhovskii
    • 1
    • 3
  • N. A. Inogamov
    • 2
  • K. Nishihara
    • 3
  1. 1.Joint Institute for High TemperaturesRussian Academy of SciencesMoscowRussia
  2. 2.Landau Institute for Theoretical PhysicsRussian Academy of SciencesChernogolovka, Moscow regionRussia
  3. 3.Institute of Laser EngineeringOsaka UniversitySuita, OsakaJapan

Personalised recommendations