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Instruments and Experimental Techniques

, Volume 61, Issue 6, pp 769–771 | Cite as

A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

  • L. Hrubčín
  • Yu. B. Gurov
  • B. Zaťko
  • O. M. Ivanov
  • S. V. Mitrofanov
  • S. V. Rozov
  • V. G. Sandukovsky
  • V. A. Semin
  • V. A. Skuratov
NUCLEAR EXPERIMENTAL TECHNIQUE
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Abstract

The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. It is shown that the degradation of the spectroscopy characteristics of a SiC detector occurs at higher doses compared to a similar Si detector.

Notes

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • L. Hrubčín
    • 1
    • 2
  • Yu. B. Gurov
    • 1
    • 3
  • B. Zaťko
    • 2
  • O. M. Ivanov
    • 1
  • S. V. Mitrofanov
    • 1
  • S. V. Rozov
    • 1
  • V. G. Sandukovsky
    • 1
  • V. A. Semin
    • 1
  • V. A. Skuratov
    • 1
  1. 1.Joint Institute for Nuclear ResearchDubnaRussia
  2. 2.Institute of Electrical Engineering, Slovak Academy of SciencesBratislavaSlovakia
  3. 3.National Research Nuclear University, Moscow Engineering Physics InstituteMoscowRussia

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