Advertisement

Instruments and Experimental Techniques

, Volume 61, Issue 6, pp 821–826 | Cite as

Investigation of Power Transistor Parameters for Designing High-Frequency High-Voltage Nanosecond Switches

  • S. I. Moshkunov
  • I. E. Rebrov
  • V. Yu. Khomich
  • E. A. Shershunova
ELECTRONICS AND RADIO ENGINEERING
  • 2 Downloads

Abstract

The efficiency of power transistors in composite high-voltage switches is analyzed. A high-voltage pulse generator capable of generating a periodic voltage signal with a rectangular shape, an amplitude as high as 16 kV, a current greater than 40 A, and a repetition rate of up to 100 kHz has been developed.

Notes

REFERENCES

  1. 1.
    Grekhov, I.V., Herald Russ. Acad. Sci., 2008, vol. 78, no. 1, p. 22.CrossRefGoogle Scholar
  2. 2.
    Kolikov, V.A., Kurochkin, V.E., Panina, L.K., Rutberg, A.F., Rutberg, F.G., Snetov, V.N., and Stogov, A.Y., Tech. Phys., 2007, vol. 52, no. 2, p. 263.CrossRefGoogle Scholar
  3. 3.
    Hackam, R. and Akiyama, H., IEEE Trans. Dielectr. Electr. Insul., 2000, vol. 7, no. 5, p. 654. doi 10.1109/ 94.879361CrossRefGoogle Scholar
  4. 4.
    Anders, A., Handbook of Plasma Immersion Ion Implantation and Deposition: Pulser Technology, New York: Wiley, 2000, pp. 501–511. http://www6.cityu.edu.hk/ appkchu/Publications/2000/00.12.pdf.Google Scholar
  5. 5.
    Nebogatkin, S.V., Rebrov, I.E., Khomich, V.Y., and Yamshchikov, V.A., Plasma Phys. Rep., 2016, vol. 42, no. 1, p. 104. https://doi.org/10.1134/ S1063780X16010128ADSCrossRefGoogle Scholar
  6. 6.
    Novickij, V., Ruzgys, P., Grainys, A., and Satkauskas, S., Bioelectrochemistry, 2018, no. 119, p. 92. https://doi. org/10.1016/j.bioelechem.2017.09.006Google Scholar
  7. 7.
    Moshkunov, S.I., Rebrov, I.E., and Khomich, V.Yu., Usp. Prikl. Fiz., 2013, vol. 1, no. 5, p. 630.Google Scholar
  8. 8.
    Khomich, V.Y., Malashin, M.V., Moshkunov, S.I., Rebrov, I.E., and Shershunova, E.A., EPE J., 2013, vol. 23, no. 4, p. 51. https://doi.org/10.1080/09398368. 2013.11463867CrossRefGoogle Scholar
  9. 9.
    Blake, C. and Bull, C., Igbt or Mosfet: Choose Wisely, International Rectifier, Application Note, 2001. http: //application-notes.digchip.com/014/14-15474.pdf.Google Scholar
  10. 10.
    Ryu, S.H., Capell, C., Jonas, C., Cheng, L., O’Loughlin, M., Burk, A., and Hefner, A., Proc. 24th IEEE Int. Symposium on Power Semiconductor Devices and ICs (ISPSD), Bruges, 2012, p. 257. doi 10.1109/ISPSD. 2012.6229072Google Scholar
  11. 11.
    Das, M.K., Bodo’s Power Syst. R, 2013, no. 22, p. 22.Google Scholar
  12. 12.
    Voronin, P.A., Silovye poluprovodnikovye klyuchi: semeistva, kharakteristiki, primenenie (Power Semiconductor Switches: Families, Characteristics, Application), Moscow: Dodeka-XXI, 2001.Google Scholar
  13. 13.
    Ammous, K., More, H., and Ammous, A., IEEE Trans. Instrum. Meas., 2010, vol. 59, no. 12, p. 3218. doi 10.1109/TIM.2010.2047302CrossRefGoogle Scholar
  14. 14.
    Shershunova, E., Malashin, M., Moshkunov, S., and Khomich, V., Acta Polytech., 2015, vol. 55, no. 1, p. 59. https://dspace.cvut.cz/handle/10467/67175.CrossRefGoogle Scholar
  15. 15.
    Khomich, V.Y., Malashin, M.V., and Moshkunov, S.I., Proc. IEEE Int. Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), Anacapri, 2016, p. 968. doi 10.1109/SPEEDAM.2016. 7525946Google Scholar
  16. 16.
    Forsythe, J.B., Paralleling of Power MOSFETs for Higher Power Output, 1981. http://citeseerx.ist.psu. edu/viewdoc/summary?doi=10.1.1.305.913.Google Scholar
  17. 17.
    Area, S.O., Application Characterization of IGBTs, International Rectifier, INT990. http://chtechnology.thomaswebs.net/pdf/AN-990%20Application% 20Characterization%20of%20IGBT's.pdf.Google Scholar
  18. 18.
    International Rectifier “Insulated Gate Bipolar Transistor IRGPS40B120U” Data Sheet, PD-94295B. http: //www.irf.ru/pdf/irgps40b120u.pdf.Google Scholar

Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • S. I. Moshkunov
    • 1
  • I. E. Rebrov
    • 1
  • V. Yu. Khomich
    • 1
  • E. A. Shershunova
    • 1
  1. 1.Institute for Electrophysics and Electric Power, Russian Academy of SciencesSt. PetersburgRussia

Personalised recommendations