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Instruments and Experimental Techniques

, Volume 61, Issue 5, pp 665–672 | Cite as

Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

  • S. V. ChernykhEmail author
  • A. V. Chernykh
  • A. P. Chubenko
  • L. N. Pavlyuchenko
  • Yu. N. Sveshnikov
  • Yu. N. Glybin
  • M. P. Konovalov
  • A. V. Panichkin
  • S. I. Didenko
Nuclear Experimental Technique
  • 16 Downloads

Abstract

The characteristics of detectors of soft-X and γ rays based on high-purity epitaxial GaAs layers are discussed. The characteristics of detectors with different rectifying contacts are compared, that is, those with a Schottky barrier and a pn junction. The spectral characteristics of the manufactured detectors that were obtained under the irradiation by 57Co and 241Am sources at different bias voltages and in a photovoltaic mode and the simulation results using the Geant 3.21 software package are presented.

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • S. V. Chernykh
    • 1
    Email author
  • A. V. Chernykh
    • 1
  • A. P. Chubenko
    • 1
    • 2
  • L. N. Pavlyuchenko
    • 2
  • Yu. N. Sveshnikov
    • 3
  • Yu. N. Glybin
    • 4
  • M. P. Konovalov
    • 1
  • A. V. Panichkin
    • 1
  • S. I. Didenko
    • 1
  1. 1.National University of Science and Technology MISiSMoscowRussia
  2. 2.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  3. 3.JSC Elma-Malakhit–JSC Concern EnergomeraMoscowRussia
  4. 4.LLC SNIIP-PlusMoscowRussia

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