Advertisement

Instruments and Experimental Techniques

, Volume 51, Issue 3, pp 456–461 | Cite as

A device for testing a fast nanographite photodetector at high temperatures

  • G. M. Mikheev
  • R. G. Zonov
  • A. N. Obraztsov
  • D. G. Kalyuzhny
Laboratory Techniques

Abstract

The results of tests of a fast photodetector based on a nanographite film grown on a silicon substrate are presented. The temperature dependence of the optoelectric signal from the photodetector in the range 300–800 K has been studied under the vacuum conditions. It has been shown experimentally that, when the temperature increases from 300 to 625 K, the photodetector’s sensitivity decreases by approximately 30%. When the temperature increases to higher values, the optoelectric-signal amplitude drops linearly and is halved at T = 740 K as compared to room temperature. Extrapolation of the experimental data shows that the optoelectric response of the photodetector disappears at T > 1000 K.

PACS numbers

85.60.Gz 85.60.Bt 78.66.-w 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Zhang, Y. and Iijima, S., Phys. Rev. Lett., 1999, vol. 82, no. 17, p. 3472.CrossRefADSGoogle Scholar
  2. 2.
    Freitag, M., Martin, Y., Misewich, J.A., et al., Nano Lett., 2003, vol. 3, p. 1067.CrossRefGoogle Scholar
  3. 3.
    Cho, N., Choudhury, K.R., Thapa, R.B., et al., Adv. Mater., 2007, vol. 19, p. 232.CrossRefGoogle Scholar
  4. 4.
    Freitag, M., Perebeinos, V., Chen, J., et al., Nano Lett., 2004, vol. 4, no. 6, p. 1063.CrossRefGoogle Scholar
  5. 5.
    Freitag, M., Chen, J., Tersoff, J., et al., Phys. Rev. Lett., 2004, vol. 93, no. 076803.Google Scholar
  6. 6.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., and Svirko, Yu.P., Appl. Phys. Lett., 2004, vol. 84, no. 24, p. 4854.CrossRefADSGoogle Scholar
  7. 7.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., and Svirko, Yu.P., Pis’ma Zh. Tekh. Fiz., 2004, vol. 30, no. 17, p. 88 [Tech. Phys. Lett. (Engl. Transl.), vol. 30, no. 0, p. 750].Google Scholar
  8. 8.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., and Svirko, Yu.P., Zh. Eksp. Teor. Fiz., 2004, vol. 126, no. 5, p. 1083 [JETP (Engl. Transl.), vol. 99, no. 5, p. 942].Google Scholar
  9. 9.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., et al., Prib. Tekh. Eksp., 2005, no. 3, p. 84 [Instrum. Exp. Tech. (Engl. Transl.), no. 3, p. 942].Google Scholar
  10. 10.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., and Svirko, Yu.P., RF Patent no. 2273946, Byull. Izobret., 2006, no. 10.Google Scholar
  11. 11.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., et al., Pis’ma Zh. Tekh. Fiz., 2005, vol. 31, no. 3, p. 11 [Tech. Phys. Lett. (Engl. Transl.), vol. 31, no. 2, p. 94].Google Scholar
  12. 12.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., et al., Proc. SPIE, 2006, vol. 6258, p. 62580Q1.Google Scholar
  13. 13.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., et al., Zh. Tekh. Fiz., 2006, vol. 76, no. 9, p. 81 [Tech. Phys. (Engl. Transl.), vol. 51, no. 9, p. 1190].Google Scholar
  14. 14.
    Mikheev, G.M., Zonov, R.G., and Obraztsov, A.N., Proc. SPIE, 2006, vol. 6189, p. 484.Google Scholar
  15. 15.
    Pavlovsky, I.Yu. and Obraztsov, A.N., Prib. Tekh. Eksp., 1998, no. 1, p. 152 [Instrum. Exp. Tech. (Engl. Transl.), no. 1, p. 136].Google Scholar
  16. 16.
    Ando, Y., Zhao, X., and Ohkohchi, M., Carbon, 1997, vol. 35, no. 1, p. 153.CrossRefGoogle Scholar
  17. 17.
    Obraztsov, A.N., Pavlovsky, I.Yu., Volkov, A.P., et al., Diamond Films Technol., 1998, vol. 8, p. 249.Google Scholar
  18. 18.
    Obraztsov, A.N., Volkov, A.P., Pavlovskii, I.Yu., et al., Pis’ma Zh.Eksp. Teor. Fiz., 1998, vol. 69, p. 381 [Tech. Phys. Lett. (Engl. Transl.), vol. 69, p. 411].Google Scholar
  19. 19.
    Wu, Y., Qiao, P., Chong, T., and Shen, Z., Adv. Mater., 2002, no. 1, p. 64.Google Scholar
  20. 20.
    Shang, N.G., Au, F.C.K., Meng, X.M., et al., Chem. Phys. Lett., 2002, vol. 358, p. 187.CrossRefADSGoogle Scholar
  21. 21.
    Wang, J.J., Zhu, M.Y., Outlaw, R.A., et al., Appl. Phys. Lett., 2004, vol. 85, no. 7, p. 1265.CrossRefADSGoogle Scholar
  22. 22.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., and Volkov, A.P., Izv. Vyssh. Uchebn. Zaved., Priborostr., 2004, vol. 47, no. 11, p. 59.Google Scholar
  23. 23.
    Mikheev, G.M., Zonov, R.G., Obraztsov, A.N., et al., Pis’ma Zh. Tekh. Fiz., 2005, vol. 31, no. 13, p. 50 [Tech. Phys. Lett. (Engl. Transl.), vol. 31, no. 7, p. 560].Google Scholar

Copyright information

© MAIK Nauka 2008

Authors and Affiliations

  • G. M. Mikheev
    • 1
  • R. G. Zonov
    • 1
  • A. N. Obraztsov
    • 2
  • D. G. Kalyuzhny
    • 1
  1. 1.Institute of Applied Mechanics, Ural DivisionRussian Academy of SciencesIzhevskRussia
  2. 2.Physics FacultyMoscow State UniversityVorob’evy gory, MoscowRussia

Personalised recommendations