In situ cleavage mechanism for semiconductor single crystals for ultrahigh-vacuum scanning tunneling microscope
A tecnique for cleaving semiconductor single crystals under ultrahigh-vacuum conditions is proposed. A system for in situ cleavage of samples for ultrahigh-vacuum scanning tunneling microscope (STM) has been developed. STM studies of the surfaces of InAs single crystals with n and p-type bulk conduction have been performed on an Omicron ultrahigh-vacuum facility.
PACS numbers68.47.Fg 68.37.Ef 68.35.Dv
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