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Inorganic Materials

, Volume 55, Issue 9, pp 903–907 | Cite as

Fabrication of ZnSe/InP Heterojunctions on Flat and Shaped Surfaces of InP Laser Crystals

  • M. G. Vasil’evEmail author
  • A. M. Vasil’ev
  • A. D. Izotov
  • S. F. Marenkin
  • O. N. Pashkova
  • A. A. Shelyakin
Article
  • 15 Downloads

Abstract—

We have studied the growth of zinc selenide layers on flat and shaped indium phosphide surfaces. The growth rate of zinc selenide has been shown to depend on substrate orientation. It has been shown that the present results can be useful in designing mesa stripe structures for quantum electronic instruments. We have fabricated mesa stripe laser diodes operating on the absorption band of methane and suitable for producing fiber-optic signal transmission systems.

Keywords:

semiconductor heterostructures zinc selenide laser diodes methane 

Notes

FUNDING

This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, in the field of basic research).

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • M. G. Vasil’ev
    • 1
    Email author
  • A. M. Vasil’ev
    • 1
  • A. D. Izotov
    • 1
  • S. F. Marenkin
    • 1
  • O. N. Pashkova
    • 1
  • A. A. Shelyakin
    • 1
  1. 1.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of SciencesMoscowRussia

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