Inorganic Materials

, Volume 55, Issue 9, pp 892–897 | Cite as

Dislocation Magnetism of the GaSb〈Mn〉 Semiconductor

  • V. P. SanyginEmail author
  • A. D. Izotov
  • O. N. Pashkova


The GaSb〈Mn〉 magnetic semiconductor has been studied using the visualization and analysis of electron-microscopic images of the material, an approach widely used in practice in making ultrastrong permanent magnets based on metallic alloys. The role of columnar magnetic crystals is assigned to manganese-decorated dislocations, and the role of a nonmagnetic matrix is played by the GaSb compound semiconductor. The material synthesized in this study has been characterized by X-ray diffraction, scanning electron microscopy, and magnetic measurements. The magnetization of a polished transverse section of GaSb〈Mn〉 has been analyzed as a function of the angle it makes with the magnetic flux direction and as a function of temperature in the range 4–300 K.


magnetic semiconductors lattice defects dislocations 



This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, basic research).


  1. 1.
    Ivanov, V.A., Aminov, T.G., Novotortsev, V.M., and Kalinnikov, V.T., Spintronics and spintronic materials, Izv. Akad. Nauk, Ser. Khim., 2004, no. 11, pp. 2255–2303.Google Scholar
  2. 2.
    Wojtowicz, T., Cywinski, G. Lim, W.L., et al., In1 – x-MnxSb – a narrow-gap ferromagnetic semiconductor, Appl. Phys. Lett., 2003, vol. 82, no. 24, paper 4310.
  3. 3.
    Wojtowicz, T., Lim, W.L., Liu, X., et al., Growth and properties of ferromagnetic In1 – xMnxSb alloys, Phys. E (Amsterdam, Neth.), 2004, vol. 20, nos. 3–4, pp. 325–332.
  4. 4.
    Csontos, M., Wojtowicz, T., Liu, X., et al., Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor, Phys. Rev. Lett., 2005, vol. 95, no. 22, paper 227 203.
  5. 5.
    Yanagi, S., Kuga, K., Slupinski, T., and Munekata, H., Carrier-induced ferromagnetic order in the narrow gap III–V magnetic alloy semiconductor (In,Mn)Sb, Phys. E (Amsterdam, Neth.), 2004, vol. 20, nos. 3–4, pp. 333–337.
  6. 6.
    Matsukura, F., Abe, E., and Ohno, H., Magnetotransport properties of (Ga,Mn)Sb, J. Appl. Phys., 2000, vol. 87, pp. 6442–6444. CrossRefGoogle Scholar
  7. 7.
    Sanygin, V.P., Filatov, A.V., Izotov, A.D., and Pashkova, O.N., Dislocations in manganese-doped InSb, Inorg. Mater., 2012, vol. 48, no. 10, pp. 977–983.CrossRefGoogle Scholar
  8. 8.
    Sanygin, V.P., Tishchenko, E.A., Dau Hieu Shi, and Izotov, A.D., Concept of impurity–dislocation magnetism in III–V compound semiconductors, Inorg. Mater., 2013, vol. 49, no. 1, pp. 6–13.CrossRefGoogle Scholar
  9. 9.
    Aliev, M.I., Safaraliev, G.I., Guliev, A.N., Dadashev, I.Sh., and Mardakhaev, B.N., Phase diagram and physical properties of alloys of the GaSb–MnSb, Izv. Akad. Nauk SSSR, Neorg. Mater., 1974, vol. 10, no. 10, pp. 1778–1782.Google Scholar
  10. 10.
    Basu, S. and Adhikari, T., Bulk growth, composition and morphology of gallium manganese antimonide – a new ternary alloy system, J. Alloys Compd., 1994, vol. 205, nos. 1–2, pp. 81–85. CrossRefGoogle Scholar
  11. 11.
    Munekata, H., Ohno, H., von Molnar, S., Chang, L.L., and Esaki, L., Diluted magnetic III–V semiconductors, Phys. Rev. Lett., 1989, vol. 63, no. 17, pp. 1849–1852. CrossRefPubMedGoogle Scholar
  12. 12.
    Dadashev, I.Sh. and Safaraliev, G.I., Physicochemical properties of Ga1 – xMnxSb (x ≥ 0.95) solid solutions, Izv. Akad. Nauk SSSR, Inorg. Mater., 1990, vol. 26, no. 6, pp. 1157–1159.Google Scholar
  13. 13.
    Chen, X., Na, M., Cheon, M., Wang, S., Luo, H., McCombe, B.D., Liu, X., Sasaki, Y., Wojtowicz, T., Furdyna, J.K., Potashnik, S.J., and Schiffer, P., Above-room-temperature ferromagnetism in GaSb/Mn digital alloys, Appl. Phys. Lett., 2002, vol. 81, no. 3, pp. 511–513. CrossRefGoogle Scholar
  14. 14.
    Matsukura, F., Abe, E., Ohno, Y., and Ohno, H., Molecular beam epitaxy of GaSb with high concentration of Mn, J. Appl. Surf. Sci., 2000, vol. 159, pp. 265–269. CrossRefGoogle Scholar
  15. 15.
    Romanowski, P., Bak-Misiuk, J., Dynowska, E., Domagala, J.Z., Sadowski, J., et al., Defect structure of high-temperature-grown GaMnSb/GaSb, Acta Phys. Pol., A, 2010, vol. 117, no. 2, pp. 341–343. CrossRefGoogle Scholar
  16. 16.
    Bobrov, A.I., Pavlova, E.D., Kudrin, A.V., and Malekhonova, N.V., Structural studies of a ferromagnetic GaMnSb layer, Semiconductors, 2013, vol. 47, no. 12, pp. 1587–1590.CrossRefGoogle Scholar
  17. 17.
    Ganesan, K. and Bhat, H.L., Magnetic and magnetotransport properties of diluted magnetic semiconductor (Ga,Mn)Sb crystals, J. Supercond. Nov. Magn., 2008, no. 21, pp. 391–397.
  18. 18.
    Pashkova, O.N., Izotov, A.D., Sanygin, V.P., and Filatov, A.V. Ferromagnetism of GaSb (2% Mn) alloy, Russ. J. Inorg. Chem., 2014, vol. 59, no. 11, pp. 1324–1327. CrossRefGoogle Scholar
  19. 19.
    Hull, D., Introduction to Dislocations, Oxford: Pergamon, 1968.Google Scholar
  20. 20.
    Osip’yan, Yu.A., Elektronnye svoistva dislokatsii v poluprovodnikakh (Electronic Properties of Dislocations in Semiconductors), Moscow: Editorial URSS, 2000.Google Scholar
  21. 21.
    Meyer, K., Physikalisch-chemische Kristallographie, Leipzig: Grundstoffindustrie, 1968.Google Scholar
  22. 22.
    Madelung, O., Physics of III–V Compounds, New York: Wiley, 1964.Google Scholar
  23. 23.
    Sanygin, V.P., Izotov, A.D., Pashkova, O.N., et al., Topographic analysis of the surface of the GaSb〈Mn〉 magnetic semiconductor, Inorg. Mater., 2016, vol. 52, no. 9, pp. 865–871. CrossRefGoogle Scholar
  24. 24.
    Sanygin, V.P., Izotov, A.D., and Pashkova, O.N., Structure and chemical composition of manganese-doped GaSb dislocations, Russ. J. Inorg. Chem., 2018, vol. 63, no. 9, pp. 1149–1155. CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • V. P. Sanygin
    • 1
    Email author
  • A. D. Izotov
    • 1
  • O. N. Pashkova
    • 1
  1. 1.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of SciencesMoscowRussia

Personalised recommendations