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Inorganic Materials

, Volume 55, Issue 9, pp 892–897 | Cite as

Dislocation Magnetism of the GaSb〈Mn〉 Semiconductor

  • V. P. SanyginEmail author
  • A. D. Izotov
  • O. N. Pashkova
Article
  • 16 Downloads

Abstract—

The GaSb〈Mn〉 magnetic semiconductor has been studied using the visualization and analysis of electron-microscopic images of the material, an approach widely used in practice in making ultrastrong permanent magnets based on metallic alloys. The role of columnar magnetic crystals is assigned to manganese-decorated dislocations, and the role of a nonmagnetic matrix is played by the GaSb compound semiconductor. The material synthesized in this study has been characterized by X-ray diffraction, scanning electron microscopy, and magnetic measurements. The magnetization of a polished transverse section of GaSb〈Mn〉 has been analyzed as a function of the angle it makes with the magnetic flux direction and as a function of temperature in the range 4–300 K.

Keywords:

magnetic semiconductors lattice defects dislocations 

Notes

FUNDING

This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, basic research).

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • V. P. Sanygin
    • 1
    Email author
  • A. D. Izotov
    • 1
  • O. N. Pashkova
    • 1
  1. 1.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of SciencesMoscowRussia

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