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Preparation of Shaped Indium Phosphide Surfaces for Edge-Emitting Devices

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Abstract

We have studied the interaction of etchants and etchant mixtures with {100} planes of InP substrates. The results demonstrate that mesa stripes and grooves faceted by a combination of planes differing in polarity—{111}A, {111}B, {110}, {112}A, or {221}A—can be obtained by properly selecting the etchant and the orientation of the mask coating. The mesa stripes have been shown to be faceted by the most close-packed planes and, in the case of polar properties, they are faceted by planes with a low dissolution rate ({111}A for the sphalerite lattice). The most close-packed planes {111}A and {111}B differ in their orientation relative to the (110) and (\(\bar {1}\)10) basal planes.

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ACKNOWLEDGMENTS

This work was supported by the Russian Federation Ministry of Education and Science (state research target for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, theme no. 0088-2014-0003) and in part by the Presidium of the Russian Academy of Sciences (program no. I.35: Scientific Principles of Creating Novel Functional Materials).

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Correspondence to M. G. Vasil’ev.

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Translated by O. Tsarev

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Vasil’ev, M.G., Izotov, A.D., Marenkin, S.F. et al. Preparation of Shaped Indium Phosphide Surfaces for Edge-Emitting Devices. Inorg Mater 55, 125–128 (2019). https://doi.org/10.1134/S0020168519010175

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Keywords:

  • indium phosphide
  • etching
  • shaped surfaces
  • mesa stripes