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Preparation of Shaped Indium Phosphide Surfaces for Edge-Emitting Devices

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We have studied the interaction of etchants and etchant mixtures with {100} planes of InP substrates. The results demonstrate that mesa stripes and grooves faceted by a combination of planes differing in polarity—{111}A, {111}B, {110}, {112}A, or {221}A—can be obtained by properly selecting the etchant and the orientation of the mask coating. The mesa stripes have been shown to be faceted by the most close-packed planes and, in the case of polar properties, they are faceted by planes with a low dissolution rate ({111}A for the sphalerite lattice). The most close-packed planes {111}A and {111}B differ in their orientation relative to the (110) and (\(\bar {1}\)10) basal planes.

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  1. 1

    Gen-ei, K., Tanioka, A., Suhara, H., and Chinen, K., High coupled power 1.3 μm edge emitting light-emitting diode with a rear window and an integrated absorber, Appl. Phys. Lett., 1988, vol. 53, no. 13, pp. 1138–1140.

  2. 2

    Bowers, E. and Burrus, C.A., Ultrawide-band long-wavelength pin photodetectors, J. Lightwave Technol., 1987, vol. 5, no. 10, pp. 1339–1350.

  3. 3

    Golikova, E.G., Gorbylev, V.A., Il’in, Yu.V., Kureshov, V.A., Leshko, A.Yu., Lyutetskii, A.V., Pikhtin, N.A., Ryaboshtan, Yu.A., Simakov, V.A., Tarasov, I.S., Tret’yakova, E.A., and Fetisova, N.V., Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds, Tech. Phys. Lett., 2000, vol. 26, no. 4, pp. 295–297.

  4. 4

    Mito, I., Kitamura, M., Kaede, K., et al., InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current, Electron. Lett., 1982, vol. 18, pp. 2–3.

  5. 5

    Mito, I., Kitamura, M., and Kobayashi, K., Double-channel planar buried-heterostructure laser diode with effective current confinement, Electron. Lett., 1982, vol. 18, pp. 953–954.

  6. 6

    Ishikawa, H., Imai, H., Tanahashi, T., et al., V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 μm wavelength, IEEE J. Quantum Electron., 1982, vol. 18, pp. 1704–1711.

  7. 7

    Vasil’ev, M.G., Vasil’ev, A.M., Izotov, A.D., and Shelyakin, A.A., High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm, Inorg. Mater., 2014, vol. 50, no. 9, pp. 888–891.

  8. 8

    Vasil’ev, M.G., Vasil’ev, A.M., and Shelyakin, A.A., High-power InP/GaInAsP buried heterostructure semiconductor laser with a modulation band of up to 10 GHz, Inorg. Mater., 2010, vol. 46, no. 9, pp. 1013–1018.

  9. 9

    Bakhadirkhanov, M.K., Ibragimov, Sh.B., and Kamolov, I.R., Effect of chemical treatment on surface states and electrochemical characteristics of Au–n-InP structures, Elektron. Obrab. Mater., 2004, no. 2, pp. 92–95.

  10. 10

    Sychikova, Ya.A., Kidalov, V.V., and Sukach, G.A., Effect of crystallographic orientation on the formation of an porous indium phosphide surface, Nanosist., Nanomater., Nanotekhnol., 2010, vol. 8, no. 1, pp. 91–99.

  11. 11

    Bezryadin, N.N., Kotov, G.I., Arsent’ev, I.N., Vlasov, Yu.N., and Starodubtsev, A.A., Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100), Semiconductors, 2012, vol. 46, no. 6, pp. 736–740.

  12. 12

    Vasil’ev, M.G., Rodchenkova, L.A., Selin, A.A., and Shelyakin, A.A., Local liquid-phase epitaxy of indium phosphide, Izv. Akad. Nauk SSSR, Neorg. Mater., 1984, vol. 20, no. 5, pp. 841–843.

  13. 13

    Leshko, A.Yu., Lyutetskii, A.V., Pikhtin, N.A., Slipchenko, S.O., Sokolova, Z.N., Fetisova, N.V., Golikova, E.G., Ryaboshtan, Yu.A., and Tarasov, I.S., High power single-mode (λ = 1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures, Semiconductors, 2002, vol. 36, no. 11, pp. 1308–1314.

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This work was supported by the Russian Federation Ministry of Education and Science (state research target for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, theme no. 0088-2014-0003) and in part by the Presidium of the Russian Academy of Sciences (program no. I.35: Scientific Principles of Creating Novel Functional Materials).

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Correspondence to M. G. Vasil’ev.

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Translated by O. Tsarev

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Vasil’ev, M.G., Izotov, A.D., Marenkin, S.F. et al. Preparation of Shaped Indium Phosphide Surfaces for Edge-Emitting Devices. Inorg Mater 55, 125–128 (2019).

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  • indium phosphide
  • etching
  • shaped surfaces
  • mesa stripes