Inorganic Materials

, Volume 54, Issue 4, pp 315–318 | Cite as

Impurity Distribution in Multicrystalline Silicon Growth

  • A. I. Nepomnyashchikh
  • R. V. Presnyakov


This paper presents experimental data on the growth of multicrystalline silicon with tailored electrical properties using starting silicon of purity better than 99.999 at %. Our calculations demonstrate that the effective distribution coefficients of Fe-group impurities decrease with increasing impurity concentration in the starting charge.


multicrystalline silicon directional solidification effective distribution coefficient 


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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  1. 1.Vinogradov Institute of Geochemistry, Siberian BranchRussian Academy of SciencesIrkutskRussia

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