Impurity Distribution in Multicrystalline Silicon Growth
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Abstract
This paper presents experimental data on the growth of multicrystalline silicon with tailored electrical properties using starting silicon of purity better than 99.999 at %. Our calculations demonstrate that the effective distribution coefficients of Fe-group impurities decrease with increasing impurity concentration in the starting charge.
Keywords
multicrystalline silicon directional solidification effective distribution coefficientPreview
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© Pleiades Publishing, Ltd. 2018