Inorganic Materials

, Volume 48, Issue 14, pp 1291–1297

Peculiarities of electron-energy structure of surface layers of porous silicon formed on p-type substrates

  • E. P. Domashevskaya
  • V. A. Terekhov
  • S. Yu. Turishchev
  • D. A. Khoviv
  • E. V. Parinova
  • V. A. Skryshevskii
  • I. V. Gavril’chenko
Article

DOI: 10.1134/S0020168512140063

Cite this article as:
Domashevskaya, E.P., Terekhov, V.A., Turishchev, S.Y. et al. Inorg Mater (2012) 48: 1291. doi:10.1134/S0020168512140063
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Abstract

The atomic and electron structure of porous silicon surface layers were investigated by the methods of ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy. The thicknesses of the surface oxide layer and the degree of distortion of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the surface oxide layer lying on the amorphous layer, which covers the nanocrystals of porous silicon upon keeping for a year, exceeds severalfold the thickness of the natural oxidation of plates of monocrystalline silicon. The distortions of the silicon-oxygen tetrahedron—the main structural unit of silicon oxide—are accompanied by the strain of Si-O bonds and the increase in Si-O-Si bond angles.

Keywords

porous silicon electron structure phase composition X-ray spectroscopy 

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • E. P. Domashevskaya
    • 1
  • V. A. Terekhov
    • 1
  • S. Yu. Turishchev
    • 1
  • D. A. Khoviv
    • 1
  • E. V. Parinova
    • 1
  • V. A. Skryshevskii
    • 2
  • I. V. Gavril’chenko
    • 2
  1. 1.Voronezh State UniversityVoronezhRussia
  2. 2.Shevchenko National UniversityKyivUkraine

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