Inorganic Materials

, Volume 48, Issue 14, pp 1291–1297

Peculiarities of electron-energy structure of surface layers of porous silicon formed on p-type substrates

  • E. P. Domashevskaya
  • V. A. Terekhov
  • S. Yu. Turishchev
  • D. A. Khoviv
  • E. V. Parinova
  • V. A. Skryshevskii
  • I. V. Gavril’chenko
Article
  • 75 Downloads

Abstract

The atomic and electron structure of porous silicon surface layers were investigated by the methods of ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy. The thicknesses of the surface oxide layer and the degree of distortion of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the surface oxide layer lying on the amorphous layer, which covers the nanocrystals of porous silicon upon keeping for a year, exceeds severalfold the thickness of the natural oxidation of plates of monocrystalline silicon. The distortions of the silicon-oxygen tetrahedron—the main structural unit of silicon oxide—are accompanied by the strain of Si-O bonds and the increase in Si-O-Si bond angles.

Keywords

porous silicon electron structure phase composition X-ray spectroscopy 

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References

  1. 1.
    Domashevskaya, E.P., Kashkarov, V.M., Manukovskii, E.Yu., Shchukarev, A.V., and Terekhov, V.A., XPS, USXS and PLS investigations of porous silicon, J. Electron. Spectrosc. Relat. Phenom., 1998, vol. 88–91, pp. 969–972.CrossRefGoogle Scholar
  2. 2.
    Domashevskaya, E.P., Terekhov, V.A., Kashkarov, V.M., et al., Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures. Phys. Slid State, 2004, vol. 46, no. 2, pp. 345–350.CrossRefGoogle Scholar
  3. 3.
    Turishchev, S.Yu., Lenshin, A.S., Domashevskaya, E.P., et al., Evolution of Nanoporous Silicon Phase Composition and Electron Energy Structure Under Natural Ageing, Phys. Status Solidi C, 2009, vol. 6, no. 7, pp. 1651–1655.CrossRefGoogle Scholar
  4. 4.
    Canham, L.T., Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett., 1990, vol. 57, pp. 1046–1048.CrossRefGoogle Scholar
  5. 5.
    John, G.C. and Singh, V.A., Theory of the photoluminescence spectra of porous silicon, Phys. Rev. B, vol. 50, pp. 5329–5334.Google Scholar
  6. 6.
    Yung, K.M., Shin, S., and Kwong, D.L., Developments in Luminescent Porous Si, J. Electrochem. Soc., 1993, vol. 140, pp. 3046–3064.CrossRefGoogle Scholar
  7. 7.
    Tolstoy, V.P., Chernyshova, I.V., and Skryshevsky, V.A., Hand-book of IR spectroscopy of ultrathin films. Wiley-interscience, 2003, p. 739.Google Scholar
  8. 8.
    Obraztsov, A.N., Timoshenko, V.Yu., Okushi, Kh., and Vatanabe, Kh., Comparative investigation of optical properties of porous silicon and SiO and SiO2 oxides, FTP, 1999, vol. 33, pp. 322–326.Google Scholar
  9. 9.
    Xi-Mao, Bao., Xiang, He., Ting, Gao, Feng, Yan., and Hui-Lan, Chen., Oxygen-related surface states and their role in photoluminescence from porous Si, Solid State Commun., 1998, vol. 109, nos. 3, pp. 169–172.Google Scholar
  10. 10.
    Turishchev, S.Yu., Terekhov, V.A., Kashkarov, V.M., et al., Investigations of the electron energy structure and phase composition of porous silicon with different porosity, J. Electron Spectrosc. Relat. Phenom., 2007, vol. 156–158, pp. 445–451.CrossRefGoogle Scholar
  11. 11.
    Ledoux, G., Gong, J., Huisken, F., et al., Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement, Appl. Phys. Lett., 2002, vol. 80, no. 25, pp. 4834–4836.CrossRefGoogle Scholar
  12. 12.
    Zimkina, T.M. and Fomichev, V.A., Ul’tramyagkaya rentgenovskaya spektroskopiya (Ultrasoft X-ray spectroscopy), Leningrad: Izd-vo LGU, 1971, p. 132.Google Scholar
  13. 13.
    Terekhov, V.A., Kahskarov, V.M., Manukovskii, E.Yu., et al., Determination of the phase compositon of the surface layers in porous silicon using ultrasoft X-ray emission spectroscopy and X-ray photoelectron spectroscopy techniques, J. Electron Spectrosc. Relat. Phenom., 2001, vol. 114–116, pp. 895–900.CrossRefGoogle Scholar
  14. 14.
    Blokhin, M.A., Rentgenovskie luchi (X-rays), Moscow: Gos. izd-vo tekhniko-teor. lit-ry, 1953, p. 456.Google Scholar
  15. 15.
    Rumsh, M.A., Lukarskii, A.P., and Shchemelov, V.N., On issue of application of secondary electron multipliers for study of soft X-ray spectra, Izv. Akad. Nauk SSSR, Ser. Fiz., 1961, vol. 25, no. 8, pp. 1060–1065.Google Scholar
  16. 16.
    Filatova, E.O., Shulakov, A.S., and Luk’yanov, V.A., Depth of formation of a reflected soft X-ray beam under conditions of specular reflection, Phys. Solid State, 1998, vol. 40, no. 7, pp. 1237–1240.CrossRefGoogle Scholar
  17. 17.
    Litovchenko, V.G. and Gorban’, A.P., Osnovy fiziki mikroelektronnykh sistem metall-dielektrik-poluprovodnik (Foundations of physics of metal — dielectri-semiconductor microelectron systems), Kiev: Naukova dumka, 1978, p. 316.Google Scholar
  18. 18.
    Nicollian, E.H., MOS Physics and Technology, New York: Wiley, 1984.Google Scholar
  19. 19.
    Grunthaner, F.J., Grunthaner, P.J., and Maserian, J., Radiation-induced defects in SiO2 as determined with XPS, IEEE Trans. Nucl. Sci., 1982, vol. 29, no. 6, pp. 1462–1466.CrossRefGoogle Scholar
  20. 20.
    Kasrai, M., Lennard, W.N., Brunner, R.W., et al., Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy, Appl. Surf. Sci., 1996, vol. 99, pp. 303–312.CrossRefGoogle Scholar
  21. 21.
    Terekhov, V.A., Trostyanskii, S.N., Domashevskaya, E.P., and Medvedev, N.M., Density of electron states in silicon surface layers implanted by antimony during thermal and optical annealings, Poverkhnost’. Fizika, Khimiya, Mekhanika, 1987, no. 10, pp. 150–153.Google Scholar
  22. 22.
    Terekhov, V.A. and Domashevskaya, E.P., Localized states of crystalline and amorphous semiconductors by data of ultrasoft X-ray spectroscopy, Izv. Akad. Nauk SSSR, Ser. Fiz., 1985, vol. 49, pp. 1531–1534.Google Scholar
  23. 23.
    Dien, L., Bancroft, G.M., Kasrai, M., et al., X-ray absorption spectroscopy of silicon dioxide (SiO2) polymorphs; the structural characterization of opal, Am. Mineral., 1994, vol. 79, pp. 622–632.Google Scholar
  24. 24.
    Baba, Y., Yamamoto, H., and Sasaki, T.A., Surface x-ray-absorption fine structures of SiOx (0 < x < 2) and SiNx (0 < x < 4/3) produced by low-energy ion implantation in Si (100), Phys. Rev. B, 1993, vol. 48, no. 15, pp. 10972–10977.CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • E. P. Domashevskaya
    • 1
  • V. A. Terekhov
    • 1
  • S. Yu. Turishchev
    • 1
  • D. A. Khoviv
    • 1
  • E. V. Parinova
    • 1
  • V. A. Skryshevskii
    • 2
  • I. V. Gavril’chenko
    • 2
  1. 1.Voronezh State UniversityVoronezhRussia
  2. 2.Shevchenko National UniversityKyivUkraine

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