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High Temperature

, Volume 56, Issue 5, pp 824–826 | Cite as

Electrical Resistivity of Silicated Silicon Carbide

  • A. V. KostanovskiyEmail author
  • M. G. Zeodinov
  • M. E. Kostanovskaya
  • A. A. Pronkin
SHORT COMMUNICATIONS

Abstract

We present the results of an experiment on the electrical resistivity of silicated silicon carbide within a temperature range of 1200–2200 K.

Notes

ACKNOWLEDGMENTS

The work was supported by the Russian Foundation for Basic Research, project no. 15-08-06279.

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Copyright information

© Pleiades Publishing, Inc. 2018

Authors and Affiliations

  • A. V. Kostanovskiy
    • 1
    Email author
  • M. G. Zeodinov
    • 1
  • M. E. Kostanovskaya
    • 1
  • A. A. Pronkin
    • 1
  1. 1.Joint Institute for High Temperatures, Russian Academy of SciencesMoscowRussia

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