Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells
The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells.
PACS numbers78.66.Fd 73.20.Dx
Unable to display preview. Download preview PDF.
- 5.Yu. E. Lozovik and V. I. Yudson, Zh. Éksp. Teor. Fiz. 71, 738 (1976) [Sov. Phys. JETP 44, 389 (1976)].Google Scholar
- 6.D. Yoshioka and A. H. MacDonald, J. Phys. Soc. Jpn. 59, 4211 (1990).Google Scholar
- 10.A. S. Ioselevich, E. I. Rashba, in Quantum Tunneling in Condensed Media, edited by Yu. Kagan and A. J. Leggett, North-Holland, Amsterdam, 1992, Chapter 7, pp. 347–425.Google Scholar