Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells

  • V. B. Timofeev
  • A. V. Larionov
  • A. S. Ioselevich
  • J. Zeman
  • G. Martinez
  • J. Hvam
  • K. Soerensen
Condensed Matter

Abstract

The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells.

PACS numbers

78.66.Fd 73.20.Dx 

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Copyright information

© MAIK "Nauka/Interperiodica" 1998

Authors and Affiliations

  • V. B. Timofeev
    • 1
  • A. V. Larionov
    • 1
  • A. S. Ioselevich
    • 2
  • J. Zeman
    • 3
  • G. Martinez
    • 3
  • J. Hvam
    • 4
  • K. Soerensen
    • 4
  1. 1.Institute of Solid State Physics Russian Academy of SciencesChernogolovka, Moscow RegionRussia
  2. 2.Landau Institute of Theoretical PhysicsRussian Academy of SciencesChernogolovka, Moscow RegionRussia
  3. 3.High Field Magnetic Laboratory, MPI-FKF and CNRSGrenobleFrance
  4. 4.Microelectronic CentreLyngbyDenmark

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