Weak antilocalization in a 2D electron gas with chiral splitting of the spectrum

  • M. A. Skvortsov
Condensed Matter


Motivated by the recent observation of the metal-insulator transition in Si MOSFETs, a study is made of the quantum interference correction to the conductivity in the presence of the Bychkov-Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The antilocalization correction vanishes, however, in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si MOSFETs is discussed.

PACS numbers

72.15.Rn 73.50.Bk 71.10.Ca 


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Copyright information

© MAIK "Nauka/Interperiodica" 1998

Authors and Affiliations

  • M. A. Skvortsov
    • 1
  1. 1.L. D. Landau Institute of Theoretical PhysicsRussian Academy of SciencesMoscowRussia

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