Effect of interparticle interactions on radiative lifetime of photoexcited electron-hole system in GaAs quantum wells
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The paper reports on an investigation of changes in the photoluminescence linewidth and lifetime of excitons and electron-hole plasma over a wide range of densities between 3×107 and 3×1012 cm−2 at a temperature of 77 K in GaAs/AlGaAs quantum wells. The roles played by thermal ionization of excitons at low densities of nonequilibrium carriers, exciton-exciton and exciton-electron collisions, and ionization of excitons at high pumping power densities have been studied.
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