Physics of the Solid State

, Volume 47, Issue 9, pp 1630–1636

On the role of vacancies in pore formation in the course of anodizing of silicon carbide

  • M. G. Mynbaeva
  • D. A. Bauman
  • K. D. Mynbaev
Semiconductors and Dielectrics

DOI: 10.1134/1.2045345

Cite this article as:
Mynbaeva, M.G., Bauman, D.A. & Mynbaev, K.D. Phys. Solid State (2005) 47: 1630. doi:10.1134/1.2045345
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Abstract

Experimental data on the preparation of stoichiometric nanoporous silicon carbide are analyzed. Theoretical calculations are performed under the assumption that nanopores are formed through the vacancy diffusion mechanism. The results obtained confirm the hypothesis that the formation of pores with a steadystate radius of several tens of nanometers in silicon carbide can be associated with the diffusion and clustering of vacancies. The experimental data indicating that the proposed mechanism of formation of nanoporous silicon carbide correlates with the existing model of formation of porous silicon carbide with a fiber structure are discussed. This correlation can be revealed by assuming that nanopores are formed at the first stage with subsequent transformation of the nanoporous structure into a fiber structure due to the dissolution of the material in an electrolyte.

Copyright information

© Pleiades Publishing, Inc. 2005

Authors and Affiliations

  • M. G. Mynbaeva
    • 1
  • D. A. Bauman
    • 1
  • K. D. Mynbaev
    • 1
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

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