On the role of vacancies in pore formation in the course of anodizing of silicon carbide
- Cite this article as:
- Mynbaeva, M.G., Bauman, D.A. & Mynbaev, K.D. Phys. Solid State (2005) 47: 1630. doi:10.1134/1.2045345
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Experimental data on the preparation of stoichiometric nanoporous silicon carbide are analyzed. Theoretical calculations are performed under the assumption that nanopores are formed through the vacancy diffusion mechanism. The results obtained confirm the hypothesis that the formation of pores with a steadystate radius of several tens of nanometers in silicon carbide can be associated with the diffusion and clustering of vacancies. The experimental data indicating that the proposed mechanism of formation of nanoporous silicon carbide correlates with the existing model of formation of porous silicon carbide with a fiber structure are discussed. This correlation can be revealed by assuming that nanopores are formed at the first stage with subsequent transformation of the nanoporous structure into a fiber structure due to the dissolution of the material in an electrolyte.