Technical Physics

, Volume 50, Issue 6, pp 680–684 | Cite as

Tunnel magnetoresistance oscillations in a ferromagnet-insulator-ferromagnet system

  • S. A. Ignatenko
  • A. L. Danilyuk
  • V. E. Borisenko
Theoretical and Mathematical Physics


A model of spin-dependent transport of electrons through a ferromagnet-insulator-ferromagnet structure is developed. It takes into account the image forces, tunnel barrier parameters, and effective masses of an electron tunneling in the barrier and in the ferromagnetic electrode in the free electron approximation. Calculations for an iron-aluminum oxide-iron structure show that, with an increase in the bias voltage, the tunnel magnetoresistance decreases monotonically and then breaks into damped oscillations caused by the interference of the electrons’ wave functions in the conduction region of the potential barrier. The image forces increase the tunnel magnetoresistance by two or three times.


Wave Function Potential Barrier Bias Voltage Effective Mass Free Electron 
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Copyright information

© Pleiades Publishing, Inc. 2005

Authors and Affiliations

  • S. A. Ignatenko
    • 1
  • A. L. Danilyuk
    • 1
  • V. E. Borisenko
    • 1
  1. 1.Belarussian State University of Informatics and Radio ElectronicsMinskBelarus

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