Semiconductors

, Volume 38, Issue 6, pp 732–735

High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates

  • M. V. Maksimov
  • Yu. M. Shernyakov
  • N. V. Kryzhanovskaya
  • A. G. Gladyshev
  • Yu. G. Musikhin
  • N. N. Ledentsov
  • A. E. Zhukov
  • A. P. Vasil’ev
  • A. R. Kovsh
  • S. S. Mikhrin
  • E. S. Semenova
  • N. A. Maleev
  • E. V. Nikitina
  • V. M. Ustinov
  • Zh. I. Alferov
Physics of Semiconductor Devices

DOI: 10.1134/1.1766381

Cite this article as:
Maksimov, M.V., Shernyakov, Y.M., Kryzhanovskaya, N.V. et al. Semiconductors (2004) 38: 732. doi:10.1134/1.1766381

Abstract

Light-current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 µm) lasers grown on GaAs substrates, with an active area based on InAs-InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a metamorphic InGaAs buffer layer with an In content of about 20%. The maximum output power in pulsed mode was 7 W at room temperature. The differential efficiency of the laser, which had a 1.5-mm-long cavity, was 50%. The temperature dependence of the threshold current is described by a characteristic temperature of 61 K in the temperature range 10–73°C.

Copyright information

© MAIK "Nauka/Interperiodica" 2004

Authors and Affiliations

  • M. V. Maksimov
    • 1
  • Yu. M. Shernyakov
    • 1
  • N. V. Kryzhanovskaya
    • 1
  • A. G. Gladyshev
    • 1
  • Yu. G. Musikhin
    • 1
  • N. N. Ledentsov
    • 1
  • A. E. Zhukov
    • 1
  • A. P. Vasil’ev
    • 1
  • A. R. Kovsh
    • 1
  • S. S. Mikhrin
    • 1
  • E. S. Semenova
    • 1
  • N. A. Maleev
    • 1
  • E. V. Nikitina
    • 1
  • V. M. Ustinov
    • 1
  • Zh. I. Alferov
    • 1
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

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