High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
- Cite this article as:
- Maksimov, M.V., Shernyakov, Y.M., Kryzhanovskaya, N.V. et al. Semiconductors (2004) 38: 732. doi:10.1134/1.1766381
- 72 Downloads
Light-current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 µm) lasers grown on GaAs substrates, with an active area based on InAs-InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a metamorphic InGaAs buffer layer with an In content of about 20%. The maximum output power in pulsed mode was 7 W at room temperature. The differential efficiency of the laser, which had a 1.5-mm-long cavity, was 50%. The temperature dependence of the threshold current is described by a characteristic temperature of 61 K in the temperature range 10–73°C.