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Semiconductors

, Volume 38, Issue 5, pp 572–575 | Cite as

Properties of self-organized SiGe nanostructures formed by ion implantation

  • Yu. N. Parkhomenko
  • A. I. Belogorokhov
  • N. N. Gerasimenko
  • A. V. Irzhak
  • M. G. Lisachenko
Low-Dimensional Systems

Abstract

Properties of self-organized SiGe quantum dots formed for the first time by ion implantation of Ge ions into Si are studied using Auger electron spectroscopy, atomic-force microscopy, and scanning electron microscopy. It is found that a spatially correlated distribution of Ge atoms is observed in Si layers implanted with Ge ions after subsequent annealing of these layers. As a result, nanometer-sized regions enriched with germanium are formed; germanium concentration in these regions is 10–12% higher than that in the surrounding matrix of the SiGe solid solution. Optical properties of the layers with SiGe quantum dots were studied using Raman scattering and photoluminescence. An intense photoluminescence peak is observed in the wavelength region of 1.54–1.58 µm at room temperature.

Keywords

Auger Germanium Electromagnetism Raman Scattering Auger Electron 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK "Nauka/Interperiodica" 2004

Authors and Affiliations

  • Yu. N. Parkhomenko
    • 1
  • A. I. Belogorokhov
    • 2
  • N. N. Gerasimenko
    • 3
  • A. V. Irzhak
    • 1
  • M. G. Lisachenko
    • 4
  1. 1.Moscow Institute of Steel and Alloys (Technological University)Russia
  2. 2.State Research Institute for the Rare-Metals IndustryMoscowRussia
  3. 3.Moscow State Institute of Electronic Engineering (Technical University)Zelenograd, Moscow oblastRussia
  4. 4.Moscow State University (Faculty of Physics)Vorob’evy gory, MoscowRussia

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