Technical Physics Letters

, Volume 30, Issue 1, pp 9–11 | Cite as

High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures

  • D. A. Livshits
  • A. R. Kovsh
  • A. E. Zhukov
  • N. A. Maleev
  • S. S. Mikhrin
  • A. P. Vasil’ev
  • E. V. Nikitina
  • V. M. Ustinov
  • N. N. Ledentsov
  • G. Lin
  • J. Chi
Article

Abstract

Single-mode lasers operating in the 1.3 μ m wavelength range have been obtained with the active region based on InAs/AlGaAs/GaAs quantum dot heterostructures. A minimum threshold current of about 1.4 mA is reached, which is a record value for ridge waveguide lasers. The maximum efficiency and maximum output power in the cw lasing mode are 0.73 W/A and 120 mW, respectively.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    B. Borchert, A. Y. Egorov, S. Illek, et al., IEEE Photonics Technol. Lett. 12, 597 (2000).CrossRefGoogle Scholar
  2. 2.
    O. B. Schekin, G. Park, D. L. Huffaker, et al., IEEE J. Quantum Electron. 36, 472 (2000).Google Scholar
  3. 3.
    V. M. Ustinov, A. E. Zhukov, N. A. Maleev, et al., J. Cryst. Growth 227, 1155 (2001).CrossRefGoogle Scholar
  4. 4.
    D. A. Livshits, A. Yu. Egorov, and H. Riechert, Electron. Lett. 36, 1643 (2000).Google Scholar
  5. 5.
    A. R. Kovsh, N. A. Maleev, A. E. Zhukov, et al., Electron. Lett. 38, 1104 (2002).CrossRefGoogle Scholar
  6. 6.
    T. R. Chen, B. Zhao, Y. H. Zhuang, and A. Yariv, Appl. Phys. Lett. 60, 1782 (1992).ADSGoogle Scholar
  7. 7.
    D. L. Huffaker, G. Park, Z. Zou, et al., IEEE J. Sel. Top. Quantum Electron. 6, 452 (2000).Google Scholar
  8. 8.
    A. E. Zhukov, A. R. Kovsh, D. A. Livshits, et al., Semicond. Sci. Technol. 18 (2003) (in print).Google Scholar
  9. 9.
    S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 117 (2000) [Semiconductors 34, 119 (2000)].Google Scholar

Copyright information

© MAIK "Nauka/Interperiodica" 2004

Authors and Affiliations

  • D. A. Livshits
    • 1
  • A. R. Kovsh
    • 1
  • A. E. Zhukov
    • 1
  • N. A. Maleev
    • 1
  • S. S. Mikhrin
    • 1
  • A. P. Vasil’ev
    • 1
  • E. V. Nikitina
    • 1
  • V. M. Ustinov
    • 1
  • N. N. Ledentsov
    • 1
  • G. Lin
    • 2
  • J. Chi
    • 2
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Industrial Technology Research InstituteHsinchuTaiwan R.O.C.

Personalised recommendations