, Volume 37, Issue 11, pp 1275–1277 | Cite as

Defect formation in PbTe under the action of a laser shock wave

  • V. S. Yakovyna
  • D. M. Zayachuk
  • N. N. Berchenko
Electronic and Optical Properties of Semiconductors


Mechanisms of the defect formation in PbTe thin films on BaF2 substrates under shock-wave action are studied, and the kinetics of the annealing of the resulting nonequilibrium crystal defects at room temperature is analyzed. The respective roles of the first-and second-order annealing reactions in settling of the equilibrium state of the defects are estimated. The contributions of Frenkel pair annihilation in both sublattices and migration of interstitials to sinks to a change in the total concentration of nonequilibrium defects at different stages of annealing are considered.


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Copyright information

© MAIK "Nauka/Interperiodica" 2003

Authors and Affiliations

  • V. S. Yakovyna
    • 1
  • D. M. Zayachuk
    • 1
  • N. N. Berchenko
    • 2
  1. 1.Lviv Polytechnical National UniversityLvivUkraine
  2. 2.Rzeszow UniversityRzeszowPoland

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