On the possibility of the direct study of local electron-phonon interaction in semiconductors

  • V. Gavryushin
Condensed Matter

DOI: 10.1134/1.1625731

Cite this article as:
Gavryushin, V. Jetp Lett. (2003) 78: 309. doi:10.1134/1.1625731

Abstract

Local electron-phonon interaction in deep-level states of defects in semiconductors was studied by induced absorption spectroscopy. Using ZnS:Cu single crystals as an example, it was shown that the laser modulation of two-step impurity absorption is an efficient technique for direct investigations of phonon relaxation effects in deep-level states. It was shown that the localized states in ZnS are prone to extremely strong electron-phonon coupling.

PACS numbers

71.38.−k 71.55.Gs 

Copyright information

© MAIK "Nauka/Interperiodica" 2003

Authors and Affiliations

  • V. Gavryushin
    • 1
  1. 1.Institute of Materials Science and Applied Research and Semiconductor Physics DepartmentVilnius UniversityVilniusLithuania

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