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Semiconductors

, Volume 37, Issue 6, pp 675–680 | Cite as

Determination of the parameters of multilayer nanostructures using two-wave X-ray reflectometry

  • N. L. Popov
  • Yu. A. Uspenskii
  • A. G. Turyanskii
  • I. V. Pirshin
  • A. V. Vinogradov
  • Yu. Ya. Platonov
Low-Dimensional Systems
  • 22 Downloads

Abstract

A method for determining the parameters of multilayer nanostructures by measuring the angular dependence of the X-ray reflectance at two wavelengths has been considered. A calculation scheme taking into account the specificity of the method was suggested, which allows operation with samples of any size and shape. The scheme was applied to C/Ni/C, Si1−xGex, and AlxGa1−xAs multilayer structures. It was shown that two-wave reflectometry allows elimination of the influence of instrumental errors; hence, the thickness, density, and composition of both polycrystalline and monocrystalline nanostructure layers reliably determined.

Keywords

Magnetic Material Electromagnetism Angular Dependence Multilayer Structure Calculation Scheme 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK "Nauka/Interperiodica" 2003

Authors and Affiliations

  • N. L. Popov
    • 1
  • Yu. A. Uspenskii
    • 1
  • A. G. Turyanskii
    • 1
  • I. V. Pirshin
    • 1
  • A. V. Vinogradov
    • 1
  • Yu. Ya. Platonov
    • 2
  1. 1.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  2. 2.Osmic IncorporatedAuburn HillsUSA

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