On effective electron mass of silicon field structures at low electron densities

  • V. T. Dolgopolov
Condensed Matter


The trial wave function method developed in [10, 11] for the case of a narrow s band in a perfect crystal is adapted for the calculation of the concentration dependence of the effective mass and the Landé factor in a two-dimensional electron system of low density. It has been found that the effective mass has a tendency to divergence at a certain critical concentration, whereas the g factor remains finite.

PACS numbers

73.20.−r 71.30.+h 71.10.Ca 


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Copyright information

© MAIK "Nauka/Interperiodica" 2002

Authors and Affiliations

  • V. T. Dolgopolov
    • 1
  1. 1.Institute of Solid-State PhysicsRussian Academy of SciencesChernogolovka, Moscow regionRussia

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