Semiconductors

, Volume 36, Issue 8, pp 944–949

Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

  • M. Aidaraliev
  • N. V. Zotova
  • S. A. Karandashev
  • B. A. Matveev
  • M. A. Remennyi
  • N. M. Stus’
  • G. N. Talalakin
  • V. V. Shustov
  • V. V. Kuznetsov
  • E. A. Kognovitskaya
Physics of Semiconductor Devices

Abstract

It is reported that a Ga0.92In0.08P0.05As0.08Sb0.87 quinary solid solution, which is lattice-matched to InAs, with a band gap of 695 meV (77 K) and 640 meV (300 K) is obtained. It is demonstrated that a heterojunction of type II is realized in the InAs/Ga0.92In0.08P0.05As0.08Sb0.87 structure. The solid solution obtained was used for the development of prototypes of light-emitting diodes and photodiodes with the highest intensity of emission and photosensitivity in the vicinity of 1.9 µm.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    N. A. Charykov, A. M. Litvak, M. P. Mikhailova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 410 (1997) [Semiconductors 31, 344 (1997)].Google Scholar
  2. 2.
    V. V. Kuznetsov, É. R. Rubtsov, and V. S. Sorokin, Zh. Fiz. Khim. 71, 415 (1997).Google Scholar
  3. 3.
    V. V. Kuznetsov, P. P. Moskvin, and V. S. Sorokin, in Nonequilibrium Phenomena During Liquid Heteroepitaxy of Semiconductor Solid Solutions (Metallurgiya, Moscow, 1991).Google Scholar
  4. 4.
    V. V. Kuznetsov and É. R. Rubtsov, Izv. Vyssh. Uchebn. Zaved., Mater. Élektron. Tekh., No. 2, 48 (1998).Google Scholar
  5. 5.
    V. V. Kuznetsov, É. R. Rubtsov, and O. A. Lebedev, Neorg. Mater. 34(5), 525 (1998).Google Scholar
  6. 6.
    V. V. Kuznetsov, N. M. Stus’, G. N. Talalakin, and É. R. Rubtsov, Kristallografiya 37, 998 (1992) [Sov. Phys. Crystallogr. 37, 530 (1992)].Google Scholar
  7. 7.
    V. L. Vasil’ev, M. V. Baidakova, E. A. Kognovitskaya, et al., in Abstracts of the 3rd International Conference on Mid-IR Optoelectronic Materials and Devices, Aachen, Germany, 1999, p. 9.Google Scholar
  8. 8.
    V. L. Vasil’ev, S. N. Losev, V. M. Smirnov, et al., in Proceedings of the 5th Conference on Intermolecular Interaction in Matter, Lublin, Poland, 1999, p. 96.Google Scholar
  9. 9.
    V. L. Vasil’ev, D. Akhmedov, G. S. Gagis, et al., in Abstracts of the 4th International Conference on Mid-IR Optoelectronic Materials and Devices, Montpellier, France, 2001, p. 97.Google Scholar
  10. 10.
    M. P. Mikhailova, G. G. Zegrya, K. D. Moiseev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 687 (1995) [Semiconductors 29, 357 (1995)].Google Scholar
  11. 11.
    M. P. Mikhailova, K. D. Moiseev, Y. A. Berezovets, et al., IEE Proc.: Optoelectron. 145, 269 (1998).CrossRefGoogle Scholar
  12. 12.
    K. D. Moiseev, A. A. Toropov, Ya. V. Terent’ev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1432 (2000) [Semiconductors 34, 1376 (2000)].Google Scholar
  13. 13.
    M. P. Mikhailova and A. N. Titkov, Semicond. Sci. Technol. 9, 1279 (1994).CrossRefADSGoogle Scholar
  14. 14.
    N. L. Bazhenov, G. G. Zegrya, V. I. Ivanov-Omskii, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 1216 (1997) [Semiconductors 31, 1046 (1997)].Google Scholar

Copyright information

© MAIK "Nauka/Interperiodica" 2002

Authors and Affiliations

  • M. Aidaraliev
    • 1
  • N. V. Zotova
    • 1
  • S. A. Karandashev
    • 1
  • B. A. Matveev
    • 1
  • M. A. Remennyi
    • 1
  • N. M. Stus’
    • 1
  • G. N. Talalakin
    • 1
  • V. V. Shustov
    • 1
  • V. V. Kuznetsov
    • 2
  • E. A. Kognovitskaya
    • 2
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State Electrotechnical UniversitySt. PetersburgRussia

Personalised recommendations