Semiconductors

, Volume 36, Issue 8, pp 944–949

Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

  • M. Aidaraliev
  • N. V. Zotova
  • S. A. Karandashev
  • B. A. Matveev
  • M. A. Remennyi
  • N. M. Stus’
  • G. N. Talalakin
  • V. V. Shustov
  • V. V. Kuznetsov
  • E. A. Kognovitskaya
Physics of Semiconductor Devices

Abstract

It is reported that a Ga0.92In0.08P0.05As0.08Sb0.87 quinary solid solution, which is lattice-matched to InAs, with a band gap of 695 meV (77 K) and 640 meV (300 K) is obtained. It is demonstrated that a heterojunction of type II is realized in the InAs/Ga0.92In0.08P0.05As0.08Sb0.87 structure. The solid solution obtained was used for the development of prototypes of light-emitting diodes and photodiodes with the highest intensity of emission and photosensitivity in the vicinity of 1.9 µm.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© MAIK "Nauka/Interperiodica" 2002

Authors and Affiliations

  • M. Aidaraliev
    • 1
  • N. V. Zotova
    • 1
  • S. A. Karandashev
    • 1
  • B. A. Matveev
    • 1
  • M. A. Remennyi
    • 1
  • N. M. Stus’
    • 1
  • G. N. Talalakin
    • 1
  • V. V. Shustov
    • 1
  • V. V. Kuznetsov
    • 2
  • E. A. Kognovitskaya
    • 2
  1. 1.Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State Electrotechnical UniversitySt. PetersburgRussia

Personalised recommendations