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Technical Physics Letters

, Volume 28, Issue 7, pp 595–596 | Cite as

On the magnetic field acting upon moving domain walls in (Bi,Yb)3(Fe,Ga)5O12 garnet ferrite films

  • V. V. Randoshkin
  • V. A. Polezhaev
  • Yu. N. Sazhin
  • N. N. Sysoev
  • V. N. Dudorov
Article
  • 17 Downloads

Abstract

The dependence of the domain wall velocity V on the magnetic field strength H in (111)-oriented (Bi, Yb)3(Fe,Ga)5O12 single crystal garnet ferrite films is studied by the method of pulsed remagnetization at the point of angular momentum compensation. It is established that the acting field strength H is decreased by an effective internal magnetic field existing in the films studied.

Keywords

Magnetic Field Ferrite Angular Momentum Field Strength Domain Wall 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    A. M. Balbashov, F. V. Lisovskii, V. K. Raev, et al., Elements and Devices Based on Circular Magnetic Domains: A Handbook, Ed. by N. N. Evtikhiev and B. N. Naumov (Radio i Svyaz’, Moscow, 1987).Google Scholar
  2. 2.
    V. V. Randoshkin, Zavod. Lab. 62(9), 32 (1996).Google Scholar
  3. 3.
    V. V. Randoshkin, Prib. Tekh. Éksp., No. 2, 155 (1995).Google Scholar
  4. 4.
    V. V. Randoshkin, Fiz. Tverd. Tela (St. Petersburg) 37(3), 652 (1995) [Phys. Solid State 37, 355 (1995)].Google Scholar
  5. 5.
    A. A. Airapetov, M. V. Logunov, V. V. Randoshkin, and V. I. Chani, Pis’ma Zh. Tekh. Fiz. 18(2), 74 (1992) [Sov. Tech. Phys. Lett. 18, 53 (1992)].Google Scholar
  6. 6.
    V. V. Randoshkin, M. V. Logunov, and V. B. Sigachev, Prib. Tekh. Éksp., No. 5, 247 (1985).Google Scholar
  7. 7.
    V. V. Randoshkin and V. B. Sigachev, Fiz. Tverd. Tela (Leningrad) 32(1), 246 (1990) [Sov. Phys. Solid State 32, 138 (1990)].Google Scholar
  8. 8.
    V. V. Randoshkin, Fiz. Tverd. Tela (St. Petersburg) 37(3), 652 (1995) [Phys. Solid State 37, 355 (1995)].Google Scholar
  9. 9.
    V. V. Randoshkin and V. B. Sigachev, Fiz. Tverd. Tela (Leningrad) 28(5), 1522 (1986) [Sov. Phys. Solid State 28, 859 (1986)].Google Scholar
  10. 10.
    V. V. Randoshkin, Fiz. Tverd. Tela (St. Petersburg) 39(8), 1421 (1997) [Phys. Solid State 39, 1260 (1997)].Google Scholar

Copyright information

© MAIK "Nauka/Interperiodica" 2002

Authors and Affiliations

  • V. V. Randoshkin
    • 1
    • 2
  • V. A. Polezhaev
    • 1
    • 2
  • Yu. N. Sazhin
    • 1
    • 2
  • N. N. Sysoev
    • 1
    • 2
  • V. N. Dudorov
    • 1
    • 2
  1. 1.Moscow State UniversityMoscowRussia
  2. 2.United Laboratory of MagnetooptoelectronicsInstitute of General Physics (Russian Academy of Sciences) and Mordvinian State UniversitySaransk, Mordvinia, Russian Federation

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