Semiconductors

, Volume 35, Issue 11, pp 1223–1230 | Cite as

Physical foundations of metastable impurity center reconstruction in semiconductors

  • D. E. Onopko
  • A. I. Ryskin
Atomic Structure and Nonelectronic Properties of Semiconductors

Abstract

The manner in which the electronic structure and chemical bonding of a perfect crystal change upon doping and vary with the charge state of a defect is analyzed. The obtained results serve as a basis for proposing a general pattern of reconstruction of metastable impurity centers, of both donor and acceptor types, in various semiconductors: “classical” III-V and II-VI semiconductor compounds, mostly ionic CdF2 crystal, and narrow-gap IV-VI compounds. Reasons are revealed for center reconstruction; general tendencies of the process and the specificity of their manifestation in some classes of crystals and types of impurity centers are established.

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Copyright information

© MAIK "Nauka/Interperiodica" 2001

Authors and Affiliations

  • D. E. Onopko
    • 1
  • A. I. Ryskin
    • 1
  1. 1.“Vavilov State Optical Institute” All-Russia Scientific CenterSt. PetersburgRussia

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