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Technical Physics Letters

, Volume 25, Issue 6, pp 471–474 | Cite as

Electric-field-controlled memory effect in heterostructures for gas sensors

  • R. B. Vasil’ev
  • M. N. Rumyantseva
  • L. I. Ryabova
  • B. A. Akimov
  • A. M. Gas’kov
  • M. Labeau
  • M. Langlet
Article

Abstract

A capacitive gas sensor has been created on the basis of an n-SnO2/SiO2/p-Si heterostructure with two successive oxide layers. The presence of polar C2H5OH, NH3, and H2O gas molecules in air leads to a significant increase in the capacitance of the structure at room temperature. An important feature of the adsorption process is a memory effect, which is confined to the possibility of maintaining the capacitance value after removal of the active component from the gas mixture. The possibility of quenching the accumulated useful signal by electric-field pulses has been realized for the first time as applied to gas sensors.

Keywords

Oxide Oxide Layer C2H5OH Adsorption Process Active Component 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© American Institute of Physics 1999

Authors and Affiliations

  • R. B. Vasil’ev
    • 1
    • 2
  • M. N. Rumyantseva
    • 1
    • 2
  • L. I. Ryabova
    • 1
    • 2
  • B. A. Akimov
    • 1
    • 2
  • A. M. Gas’kov
    • 1
    • 2
  • M. Labeau
    • 1
    • 2
  • M. Langlet
    • 1
    • 2
  1. 1.M. V. Lomonosov Moscow State UniversityMoscow
  2. 2.Institut National Polytechnique de GrenobleSt Martin d’HèresFrance

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