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Semiconductors

, Volume 34, Issue 3, pp 358–362 | Cite as

Special features of relaxation of metastable states induced thermally and by photoexcitation in (a-Si:H):P films

  • I. A. Kurova
  • É. V. Larina
  • N. N. Ormont
Amorphous, Vitreous, and Porous Semiconductors
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Abstract

Kinetics of relaxation of metastable states that are induced thermally or by photoexcitation and cause an increase in dark electrical conductivity of (a-Si:H):P films is discussed. It is established that the relaxation is described by expanded exponential functions with the parameters τ and β depending differently on temperature in the cases of thermal excitation and photoexcitation. Thus, the relaxation of photo-induced states is characterized by a decrease in β with temperature, whereas the parameter β is almost temperature-independent for thermally induced states. It is shown that these dissimilar temperature dependences of β correlate with temperature variations of the half-width of annealing-energy distribution for these states. The observed features of relaxation of thermally induced and photo-induced metastable states are caused by different mechanisms of their formation. The origin of these states can be the same and related to activation of hydrogen-passivated phosphorus atoms.

Keywords

Phosphorus Electrical Conductivity Temperature Variation Magnetic Material Exponential Function 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© MAIK "Nauka/Interperiodica" 2000

Authors and Affiliations

  • I. A. Kurova
    • 1
  • É. V. Larina
    • 1
  • N. N. Ormont
    • 1
  1. 1.Moscow State UniversityVorob’evy gory, MoscowRussia

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