, Volume 33, Issue 5, pp 578–585

D’yakonov-Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel

  • M. V. Cheremisin
  • G. G. Samsonidze
The Physics of Semiconductor Devices

DOI: 10.1134/1.1187732

Cite this article as:
Cheremisin, M.V. & Samsonidze, G.G. Semiconductors (1999) 33: 578. doi:10.1134/1.1187732


The instability of a two-dimensional electronic liquid in the channel of a ballistic field-effect transistor is analyzed by investigating the energy balance. A criterion of instability is found for arbitrary boundary conditions. Using energy-balance analysis we propose a device with a high instability growth rate. The transistor possesses a spatially nonuniform channel and is analogous to a divergent channel in classical hydrodynamics. Our computed growth rate and threshold of the instability for this device agree with the computational data.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© American Institute of Physics 1999

Authors and Affiliations

  • M. V. Cheremisin
    • 1
    • 2
  • G. G. Samsonidze
    • 1
    • 3
  1. 1.A. F. Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.GES, 074France
  3. 3.Department of Electrical EngineeringUniversity of MarylandBaltimoreUSA

Personalised recommendations