, Volume 33, Issue 2, pp 107–130

Deep level centers in silicon carbide: A review

  • A. A. Lebedev

DOI: 10.1134/1.1187657

Cite this article as:
Lebedev, A.A. Semiconductors (1999) 33: 107. doi:10.1134/1.1187657


Results from current studies of the parameters of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. Data are presented on the ionization energy and capture cross sections of centers formed by doping SiC with different types of impurities or during irradiation, as well as of intrinsic defects. The involvement of these centers in radiative and nonradiative recombination is examined. This analysis of published data illustrates the large effect of intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.

Copyright information

© American Institute of Physics 1999

Authors and Affiliations

  • A. A. Lebedev
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

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