Semiconductors

, Volume 32, Issue 10, pp 1062–1064 | Cite as

Effect of In doping on the kinetic coefficients in solid solutions of the system PbzSn1−z)0.95Ge0.05Te

  • S. A. Nemov
  • V. I. Proshin
  • S. M. Nakhmanson
Electronic and Optical Properties of Semiconductors
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Abstract

In the quaternary solid solutions (PbzSn1−z)0.95Ge0.05Te (z=0.35 and 0.40) the effect of addition of indium (in amounts of 5–20 at. %) on the temperature dependence of the electrical conductivity σ, Hall coefficient R, Seebeck coefficient S, and Hall mobility u is investigated on samples prepared using powder technology. We found a monotonic dependence of the hole density p on the indium content NIn with a tendency toward saturation at a level pmax≈3×1021 cm−3, an abrupt drop in the mobility in samples with ppmax, and changes in the character of the temperature dependences R(T) and σ(T). We show that these peculiarities in the behavior of the kinetic coefficients can be interpreted in terms of quasilocal indium impurity states against the background of the valence band spectrum (with energy ɛIn∼0.3 eV) and resonance hole scattering into these states.

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Copyright information

© American Institute of Physics 1998

Authors and Affiliations

  • S. A. Nemov
    • 1
  • V. I. Proshin
    • 1
  • S. M. Nakhmanson
    • 1
  1. 1.St. Petersburg State Technical UniversitySt. PetersburgRussia

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