Semiconductors

, Volume 32, Issue 10, pp 1036–1039

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

  • V. V. Chaldyshev
  • V. V. Preobrazhenskii
  • M. A. Putyato
  • B. R. Semyagin
  • N. A. Bert
  • A. E. Kunitsyn
  • Yu. G. Musikhin
  • V. V. Tret’yakov
  • P. Werner
Atomic Structure and Non-Electronic Properties of Semiconductors

DOI: 10.1134/1.1187561

Cite this article as:
Chaldyshev, V.V., Preobrazhenskii, V.V., Putyato, M.A. et al. Semiconductors (1998) 32: 1036. doi:10.1134/1.1187561

Abstract

Molecular-beam epitaxy at 200 °C is used to grow an InAs/GaAs superlattice containing 30 InAs delta-layers with a nominal thickness of 1 monolayer, separated by GaAs layers of thickness 30 nm. It is found that the excess arsenic concentration in such a superlattice is 0.9×1020 cm−3. Annealing the samples at 500 and 600 °C for 15 min leads to precipitation of the excess arsenic mainly into the InAs delta-layers. As a result, a superlattice of two-dimensional sheets of nanoscale arsenic clusters, which coincides with the superlattice of the InAs delta-layers in the GaAs matrix, is obtained.

Copyright information

© American Institute of Physics 1998

Authors and Affiliations

  • V. V. Chaldyshev
    • 1
  • V. V. Preobrazhenskii
    • 1
  • M. A. Putyato
    • 1
  • B. R. Semyagin
    • 1
  • N. A. Bert
    • 2
  • A. E. Kunitsyn
    • 2
  • Yu. G. Musikhin
    • 2
  • V. V. Tret’yakov
    • 2
  • P. Werner
    • 3
  1. 1.Institute of Semiconductor PhysicsSiberian Branch of the Russian Academy of SciencesNovosibirskRussia
  2. 2.A. F. Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia
  3. 3.Max-Plank-Institute of Microstructure PhysicsHalleGermany

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