Semiconductors

, Volume 32, Issue 7, pp 734–735

Preparation and properties of GeS2 single crystals

  • A. V. Golubkov
  • G. B. Dubrovskii
  • A. I. Shelykh
Electronic and Optical Properties of Semiconductors

Abstract

Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a=11.45 Å, b=16.09 Å, c=6.7 Å, and β=91°. The reflection and transmission spectra are measured in the region of the absorption edge. The gap width is found to be equal to 3.2 eV.

References

  1. 1.
    M. Rubenstein and G. Roland, Acta Crystallogr. 27, 505 (1971).Google Scholar
  2. 2.
    A. Feltz, Amorphe und glasartige anorganische Festk〈F6〉rper (Amorphous and Glassy Inorganic Solids) (Akademie-Verlag, Berlin, 1983) [Moscow, 1986].Google Scholar

Copyright information

© American Institute of Physics 1998

Authors and Affiliations

  • A. V. Golubkov
    • 1
  • G. B. Dubrovskii
    • 1
  • A. I. Shelykh
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

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